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Topic Area: Microelectronics
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1. A Detailed Failure Analysis Examination of the Effect of Thermal Cycling on Cu TSV Reliability
Topic: Microelectronics
Published: 1/1/2014
Authors: Chukwudi Azubuike Okoro, June Waiyin Lau, Yaw S Obeng, Klaus Hummler
Abstract: In this work, a detailed failure analysis of the physical root cause for the increase in electrical resistance and radio-frequency (RF) transmission coefficient of through-silicon via (TSV) daisy chain was investigated. Six different failure modes we ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913115

2. A high-bandwidth electromagnetic MEMS motion stage for scanning applications
Topic: Microelectronics
Published: 8/23/2012
Authors: Young M. Choi, Nicholas G Dagalakis, Jason John Gorman, Seung Ho Yang, Yong Sik Kim, Jae Myung Yoo
Abstract: This paper presents the design, fabrication and experimental results of an out-of-plane electromagnetic motion stage. The combination of electromagnetic actuation and a flexure-supported platform enables bidirectional motion with high precision as ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910087

3. Accelerated Stress Test Assessment of Through-Silicon Vias Using RF Signals
Topic: Microelectronics
Published: 6/1/2013
Authors: Chukwudi Azubuike Okoro, Pavel Kabos, Jan Obrzut, Klaus Hummler, Yaw S Obeng
Abstract: In this work, radio frequency (RF) signal is demonstrated as an effective metrology tool for the assessment of the effect of thermal cycling on the reliability of through-silicon via (TSV) stacked dies. It was found that RF signal integrity of TSV da ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912850

4. Advanced Metrology for Nanoelectronics at the National Institute of Standards and Technology
Topic: Microelectronics
Published: 3/11/2009
Authors: Joaquin (Jack) Martinez, Yaw S Obeng, Stephen Knight
Abstract: A broad range of programs at the National Institute of Standards and Technology address critical metrology and characterization challenges facing the nanoelectronics industry. A brief history of the program will be included. From these programs we ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=901409

5. Analysis of Implanted Silicon Dopant Profiles
Topic: Microelectronics
Published: 9/1/2013
Authors: B. P. Geiser, Eric B Steel, Karen T Henry, D. Olson, T.J. Prosa
Abstract: Atom probe tomography implant dose measurements are reported for National Institute of Standards and Technology Standard Reference Material 2134 (As implant). Efforts were taken to manufacture specimens with limited variation in size and shape to mi ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912365

6. Back-End-of-Line Test Structure Design and Simulation for Subsurface Metrology with Scanning Probe Microscopy
Topic: Microelectronics
Published: 12/13/2013
Authors: Lin You, Emily Hitz, Jungjoon Ahn, Yaw S Obeng, Joseph J Kopanski
Abstract: As demands in the semiconductor industry call for further miniaturization and performance enhancement of electronic systems, the traditional planar (2D) electronic interconnection and packaging technologies show their difficulties in meeting the ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915013

7. Band Offsets of Al^d2^O^d3^ / In^d1-x^Ga^dx^As (x = 0.53 and 0.75) and the Effects of Post-Deposition Annealing
Topic: Microelectronics
Published: 2/2/2010
Authors: Nhan V Nguyen, Min Xu, Oleg A Kirillov, Pei D Ye, C Wang, Kin P Cheung, John S Suehle
Abstract: Band offsets at the interfaces of InxGa1-xAs / Al2O3 / Al where x = 0.53 and x = 0.75 were determined by internal photoemission and spectroscopic ellipsometry. The photoemission energy threshold at the InxGa1-xAs / Al2O3 interface was found to be in ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=903535

8. Challenges and Opportunities of Organic Electronics
Topic: Microelectronics
Published: 4/2/2010
Author: Calvin Chan
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905387

9. Characterization and Applications of On-Wafer Diode Noise Sources
Topic: Microelectronics
Published: 12/1/1998
Authors: Lawrence P. Dunleavy, James Paul Randa, David K Walker, Robert L Billinger, Joseph Paul Rice
Abstract: A set of wafer-probeable diode noise source transfer standards are characterized using on-wafer noise-temperature methods developed at the National Institute of Standards and Technology (NIST), Boulder, CO.
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=5598

10. Characterization of On-Wafer Diode Noise Sources
Topic: Microelectronics
Published: 6/1/1998
Authors: James Paul Randa, David K Walker, Lawrence P. Dunleavy, Robert L Billinger, Joseph Paul Rice
Abstract: A set of wafer probeable diode noise source transfer standards are characterized using on-wafer noise temperature methods developed recently at the National Institute of Standards and Technology (NIST). This paper reviews the methods for accurate on ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=27897



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