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1. Accelerated Stress Test Assessment of Through-Silicon Vias Using RF Signals
Topic: Microelectronics
Published: 6/1/2013
Authors: Chukwudi Azubuike Okoro, Pavel Kabos, Jan Obrzut, Klaus Hummler, Yaw S Obeng
Abstract: In this work, radio frequency (RF) signal is demonstrated as an effective metrology tool for the assessment of the effect of thermal cycling on the reliability of through-silicon via (TSV) stacked dies. It was found that RF signal integrity of TSV da ...

2. Amplitude and phase-resolved nano-spectral imaging of surface phonon polaritons in hexagonal boron nitride
Topic: Microelectronics
Published: 6/9/2015
Authors: Samuel Berweger, Shi Zhiwen, Hans A Bechtel, Sun Yinghui, Zeng Bo, Jin Chenhao, Chang Henry, Michael C. Martin, Markus B. Raschke, Feng Wang
Abstract: Phonon polaritons are quasiparticles resulting from strong coupling of photons with optical phonons. Excitation and control of these quasiparticles in 2D materials offer the opportunity to confine and transport light at the nanoscale. Here, we imag ...

3. Analysis of Implanted Silicon Dopant Profiles
Topic: Microelectronics
Published: 9/1/2013
Authors: B. P. Geiser, Eric B Steel, Karen T Henry, D. Olson, T.J. Prosa
Abstract: Atom probe tomography implant dose measurements are reported for National Institute of Standards and Technology Standard Reference Material 2134 (As implant). Efforts were taken to manufacture specimens with limited variation in size and shape to mi ...

4. Challenges and Opportunities of Organic Electronics
Topic: Microelectronics
Published: 4/2/2010
Author: Calvin Chan

5. Characterization of On-Wafer Diode Noise Sources
Topic: Microelectronics
Published: 6/1/1998
Authors: James Paul Randa, David K Walker, Lawrence P. Dunleavy, Robert L. Billinger, John Rice
Abstract: A set of wafer probeable diode noise source transfer standards are characterized using on-wafer noise temperature methods developed recently at the National Institute of Standards and Technology (NIST). This paper reviews the methods for accurat ...

6. Defect and Microstructural Evolution in Thermally Cycled Cu Through-Silicon Vias
Topic: Microelectronics
Published: 6/14/2014
Authors: Chukwudi Azubuike Okoro, James Marro, Yaw S Obeng, Kathleen Richardson
Abstract: In this study, the effect of thermal cycling on defect generation, microstructure, and the RF signal integrity of blind Cu through-silicon via (TSV) were investigated. Three different thermal cycling profiles were used; each differentiated by their ...

7. Detection of 3D Interconnect Bonding Voids by IR Microscopy
Topic: Microelectronics
Published: 2/20/2014
Authors: Jonny H?glund, Zoltan Kiss, Gyorgy Nadudvari , Zsolt Kovacs, Szabolcs Velkei, Moore Chris, Victor Vartanian, Richard A Allen
Abstract: There are a number of factors driving 3D integration including reduced power consumption, RC delay, and form factor as well as increased bandwidth. However, before these advantages can be realized, various technical and cost hurdles must be overcom ...

8. Dielectrophoretic Trapping of P19 Cells on Indium Tin Oxide based Microelectrode Arrays
Topic: Microelectronics
Published: 11/8/2013
Authors: Aveek Gangopadhyay, Saugandhika Minnikanti, Darwin R Reyes-Hernandez, Mulpuri V. Rao, Nathalia Peixoto
Abstract: A microfabricated device comprised of a microelectrode array (MEA) and a microfluidic channel is presented here for the purpose of trapping cells using positive dielectrophoresis (DEP). Transparent indium tin oxide (ITO) electrodes are patterned in a ...

9. Efficient Greens Function Modeling of Line and Surface Defects in Multilayered Anisotropic Elastic and Piezoelectric Material
Topic: Microelectronics
Published: 10/2/2006
Authors: B. Yang, Vinod K Tewary
Abstract: Greens function (GF) modeling defects may take effect only if the GF as well as its various integrals over a line, a surface and/or a small volume can be efficiently evaluated. The GF itself is needed in modeling a point defect while the integrals ne ...

10. Experimental Measurement of the Effect of Copper Through-Silicon Via Diameter on Stress Buildup Using Synchrotron-based X-ray Source
Topic: Microelectronics
Published: 6/20/2015
Authors: Chukwudi Azubuike Okoro, Lyle E Levine, Yaw S Obeng, Ruqing Xu
Abstract: In this work, the effect of Cu through-silicon via (TSV) diameter on stress buildup in Cu TSVs was experimentally determined using synchrotron-based X-ray microdiffraction technique. With the aid of atomic force microscopy (AFM), Cu protrusion was al ...

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