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Topic Area: Microelectronics
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Displaying records 1 to 10 of 36 records.
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1. Metrology Needs for TSV Fabrication
Topic: Microelectronics
Published: 3/4/2014
Authors: Victor Vartanian, Richard A Allen, Larry Smith, Klaus Hummler, Steve Olson, Brian Sapp
Abstract: This paper focuses on the metrology needs and challenges of through silicon via (TSV) fabrication, consisting of TSV etch, liner, barrier, and seed (L/B/S) depositions, copper plating, and copper CMP. These TSVs, with typical dimensions within a f ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=914497

2. Detection of 3D Interconnect Bonding Voids by IR Microscopy
Topic: Microelectronics
Published: 2/20/2014
Authors: Jonny H?glund, Zoltan Kiss, Gyorgy Nadudvari , Zsolt Kovacs, Szabolcs Velkei, Moore Chris, Victor Vartanian, Richard A Allen
Abstract: There are a number of factors driving 3D integration including reduced power consumption, RC delay, and form factor as well as increased bandwidth. However, before these advantages can be realized, various technical and cost hurdles must be overcom ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=914474

3. A Detailed Failure Analysis Examination of the Effect of Thermal Cycling on Cu TSV Reliability
Topic: Microelectronics
Published: 1/1/2014
Authors: Chukwudi Azubuike Okoro, June W. Lau, Yaw S Obeng, Klaus Hummler
Abstract: In this work, a detailed failure analysis of the physical root cause for the increase in electrical resistance and radio-frequency (RF) transmission coefficient of through-silicon via (TSV) daisy chain was investigated. Six different failure modes we ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913115

4. Back-End-of-Line Test Structure Design and Simulation for Subsurface Metrology with Scanning Probe Microscopy
Topic: Microelectronics
Published: 12/13/2013
Authors: Lin You, Emily Hitz, Jungjoon Ahn, Yaw S Obeng, Joseph J Kopanski
Abstract: As demands in the semiconductor industry call for further miniaturization and performance enhancement of electronic systems, the traditional planar (2D) electronic interconnection and packaging technologies show their difficulties in meeting the ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915013

5. Dielectrophoretic Trapping of P19 Cells on Indium Tin Oxide based Microelectrode Arrays
Topic: Microelectronics
Published: 11/8/2013
Authors: Aveek Gangopadhyay, Saugandhika Minnikanti, Darwin R Reyes-Hernandez, Mulpuri V. Rao, Nathalia Peixoto
Abstract: A microfabricated device comprised of a microelectrode array (MEA) and a microfluidic channel is presented here for the purpose of trapping cells using positive dielectrophoresis (DEP). Transparent indium tin oxide (ITO) electrodes are patterned in a ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=914569

6. Analysis of Implanted Silicon Dopant Profiles
Topic: Microelectronics
Published: 9/1/2013
Authors: B. P. Geiser, Eric B Steel, Karen T Henry, D. Olson, T.J. Prosa
Abstract: Atom probe tomography implant dose measurements are reported for National Institute of Standards and Technology Standard Reference Material 2134 (As implant). Efforts were taken to manufacture specimens with limited variation in size and shape to mi ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912365

7. Accelerated Stress Test Assessment of Through-Silicon Vias Using RF Signals
Topic: Microelectronics
Published: 6/1/2013
Authors: Chukwudi Azubuike Okoro, Pavel Kabos, Jan Obrzut, Klaus Hummler, Yaw S Obeng
Abstract: In this work, radio frequency (RF) signal is demonstrated as an effective metrology tool for the assessment of the effect of thermal cycling on the reliability of through-silicon via (TSV) stacked dies. It was found that RF signal integrity of TSV da ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912850

8. Use of RF-Based Technique as a Metrology Tool for TSV Reliability Analysis
Topic: Microelectronics
Published: 5/28/2013
Authors: Chukwudi Azubuike Okoro, Yaw S Obeng, Jan Obrzut, Pavel Kabos, Klaus Hummler
Abstract: In this work, we used radio frequency (RF) based measurement technique is used as a prognostic tool for the assessment of the effect of thermal cycling on the reliability of through-silicon via (TSV) stacked dies. It was found that RF signal integrit ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913332

9. A high-bandwidth electromagnetic MEMS motion stage for scanning applications
Topic: Microelectronics
Published: 8/23/2012
Authors: Young M. Choi, Nicholas G Dagalakis, Jason John Gorman, Seung Ho Yang, Yong Sik Kim, Jae Myung Yoo
Abstract: This paper presents the design, fabrication and experimental results of an out-of-plane electromagnetic motion stage. The combination of electromagnetic actuation and a flexure-supported platform enables bidirectional motion with high precision as ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910087

10. Metrology for Nanosystems and Nanoelectronics Reliability Assessments
Topic: Microelectronics
Published: 8/20/2012
Authors: Yaw S Obeng, Chukwudi Azubuike Okoro, Joseph J Kopanski
Abstract: The traditional models and techniques for studying reliability in integrated circuits may not be appropriate for nanoelectronics and nanosystems. In this paper, we present an overview of a number of materials and metrology techniques currently un ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911433



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