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Topic Area: Semiconductor Materials

Displaying records 1 to 10 of 70 records.
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1. Epitaxial Si encapsulation of highly misfitting SiC quantum dot arrays formed on Si (001)
Topic: Semiconductor Materials
Published: 1/8/2014
Authors: Christopher W. Petz, Dongyue Yang, Alline F Myers, Jeremey Levy, Jerrold Floro
Abstract: This work examines Si overgrowth to encapsulate 3C-SiC quantum dot arrays epitaxially grown on Si substrates. Using transmission electron microscopy we show how the crystalline quality of the Si cap depends on the growth conditions. Overgrowth at 3 ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=914443

2. Degradation of photovoltaic devices at high concentration by space charge limited currents
Topic: Semiconductor Materials
Published: 10/1/2013
Authors: Ari David Feldman, Richard K. Ahrenkiel, John H Lehman
Abstract: High-injection mobility reduction is examined by theory, modeling, and experimental data acquired by resonance coupled photoconductive decay (RCPCD). The ambipolar mobility is shown to reduce to zero when the constituent injection-dependent carr ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912013

3. Decoupling small-scale roughness and long-range features on deep reactive ion etched silicon surfaces
Topic: Semiconductor Materials
Published: 9/19/2013
Authors: Frank W DelRio, Lawrence H Friedman, Michael S. Gaither, William A Osborn, Robert Francis Cook
Abstract: Roughness scaling of three different deep reactive ion etched (DRIE) silicon surfaces is investigated using atomic force microscopy. At small distances, height-height correlations H reveal power-law behavior with equal scaling exponents for all surf ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913812

4. X-Ray Micro-Beam Diffraction Determination of Full Stress Tensors in Cu TSVs
Topic: Semiconductor Materials
Published: 5/28/2013
Authors: Chukwudi Azubuike Okoro, Lyle E Levine, Oleg A Kirillov, Yaw S Obeng, Ruqing Xu, Jonathan Z Tischler, Wenjun Liu, Klaus Hummler
Abstract: We report the first non-destructive, depth resolved determination of the full stress tensor in Cu through-silicon vias (TSVs), using synchrotron based micro-beam X-ray diffraction. Two adjacent Cu TSVs were studied; one deliberately capped with SiO2, ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913440

5. Studies of photoconductivity and FET behavior in examining drift mobility, surface depletion, and transient effects in Si-doped GaN nanowires examined in vacuum and air
Topic: Semiconductor Materials
Published: 5/3/2013
Authors: Norman A Sanford, Lawrence H Robins, Paul Timothy Blanchard, K. Soria, B. Klein, Kristine A Bertness, John B Schlager, Aric Warner Sanders
Abstract: Variable intensity photoconductivity (PC) performed under vacuum at 325 nm was used to estimate drift mobility and negative surface charge density sigma for c-axis oriented Si-doped GaN nanowires (NWs). In this approach we assumed that sigma was res ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912467

6. Thermo-Mechanical Characterization of Au‹In Transient Liquid Phase Bonding Die-Attach
Topic: Semiconductor Materials
Published: 4/9/2013
Authors: Brian Joseph Grummel, Habib A Mustain, Z. John Shen, Allen R Hefner Jr
Abstract: In next-generation wide-bandgap power electronics, the semiconductor device die-attach is of critical importance, for this transient liquid phase (TLP) bonding is a promising and effective die-attach technique. In this work, the thermal and mechanica ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911241

7. Critical Dimension small angel X-ray scattering measurements of FinFET and 3D memory structures
Topic: Semiconductor Materials
Published: 4/8/2013
Authors: Regis J Kline, Daniel Franklin Sunday, Chengqing C. Wang, Wen-Li Wu, Charlie Settens, Bunday Benjamin, Brad Thiel, Matyi Richard
Abstract: Critical dimension small angle X-ray scattering (CD-SAXS) has been identified as a potential solution for measurement of nanoscale lithographic features by interrogating structures with sub-nanometer wavelength radiation in transmission geometry. The ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913546

8. Accuracy and Resolution of Nanoscale Strain Measurement Techniques
Topic: Semiconductor Materials
Published: 3/26/2013
Authors: William A Osborn, Lawrence H Friedman, Mark D Vaudin, Stephan J Stranick, Michael S. Gaither, Justin M Gorham, Victor Vartanian, Robert Francis Cook
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913178

9. Transient mobility in silicon as seen by a combination of free-carrier absorption and resonance-coupled photoconductive decay
Topic: Semiconductor Materials
Published: 3/12/2013
Authors: Ari David Feldman, John H Lehman, Richard K. Ahrenkiel
Abstract: The combination of the resonance-coupled photoconductive decay (RCPCD) apparatus and a pump-probe free carrier absorption experiment results in a method of viewing transient mobility. RCPCD uses an Nd:YAG laser operating at 1064 nm to pump the p-ty ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911502

10. Towards Discrete Axial p-n Junction Nanowire LEDs Grown by Plasma-Assisted MBE
Topic: Semiconductor Materials
Published: 3/6/2013
Author: Matthew David Brubaker
Abstract: In this paper we investigate axial p-n junction GaN nanowires grown by plasma-assisted MBE, with particular attention to the effect of Mg doping on the device characteristics of individual nanowire LEDs. We observe that single-nanowire LEDs produce ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911884



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