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You searched on: Author: Roy Geiss

Displaying records 1 to 10 of 38 records.
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1. Characterization of InGaN quantum disks in GaN nanowires
Published: 3/4/2014
Authors: Alexana Roshko, Roy Howard Geiss, John B. Schlager, Matthew David Brubaker, Kristine A Bertness, Norman A Sanford, Todd E Harvey
Abstract: Catalyst-free GaN nanowires with InGaN quantum disks (QDs) were characterized by scanning/transmission elec-tron microscopy (S/TEM) and photoluminescence. A va-riety of structures, from QDs with large strain fields to apparently strain free QDs were ...

2. Transmission EBSD in the Scanning Electron Microscope
Published: 5/1/2013
Authors: Roy Howard Geiss, Katherine P. Rice, Robert R Keller
Abstract: A new method for obtaining Kikuchi diffraction patterns from thin specimens in transmission has been developed for use in the SEM, scanning electron microscope, using a conventional electron backscatter diffraction (EBSD) detector and with a slight m ...

3. Transmission EBSD-Like Patterns in the SEM for Nanoparticle and Ultrathin Film Analysis
Published: 3/1/2012
Authors: Robert R Keller, Roy Howard Geiss
Abstract: We describe a new high-resolution scanning electron microscope method for measuring crystallographic information in nanoparticles and ultrathin films with dimensions down to 10 nm, through use of an electron backscatter diffraction (EBSD) detector. B ...

4. In-Situ Measurement of Atomic Force Microscope Tip Wear by Contact Resonance Force Microscopy
Published: 3/15/2011
Authors: Jason Philip Killgore, Roy Howard Geiss, Donna C. Hurley
Abstract: Contact resonance force microscopy (CR-FM) mapping provides a means of continuously tracking contact stiffness while scanning an AFM tip in contact with a substrate. Because the contact stiffness is a function of contact radius, tip wear leading to ...

5. Methods for TEM analysis of NIST‰s SWCNT SRM
Published: 3/25/2010
Authors: Roy Howard Geiss, Elisabeth Mansfield, Jeffrey A Fagan
Abstract: The National Institute of Standards and Technology (NIST) is developing a series of single-walled carbon nanotube, SWCNT, reference materials, RMs, to provide researchers with well characterized materials for their applications. The SWCNT reference m ...

6. Elastic constants and dimensions of imprinted polymeric nanolines determined from Brillouin light scattering
Published: 1/18/2010
Authors: Ward L Johnson, Sudook A. Kim, Roy Howard Geiss, Colm Flannery, Paul R Heyliger, Christopher L Soles, Wen-Li Wu, Chengqing C. Wang, Christopher M Stafford, B D. Vogt
Abstract: Elastic constants and cross-sectional dimensions of imprinted nanolines of poly(methyl methacrylate) (PMMA) on silicon are determined nondestructively from finite-element inversion analysis of dispersion curves of hypersonic acoustic modes of these ...

7. Transmission Electron Diffraction from nanoparticles, nanowires and thin films in an SEM using conventional EBSD equipment
Published: 1/1/2010
Authors: Roy Howard Geiss, Robert R Keller, David Thomas Read
Abstract: We describe a new scanning electron microscope (SEM) method for obtaining and analyzing the crystallographic structure and orientation in nanoparticles and ultrathin films using conventional electron backscatter diffraction (EBSD) equipment.

8. Effect of microstructure on magnetic properties and anisotropy distributions in Co/Pd thin films and nanostructures
Published: 11/19/2009
Authors: Justin M Shaw, Hans Toya Nembach, Thomas J Silva, Stephen E Russek, Roy Howard Geiss
Abstract: The structure of Co/Pd multilayers has a strong effect on the localized anisotropy distribution within a film and the resulting switching properties of nanostructures fabricated from identical material. By varying the underlying seed layer, the micr ...

9. Methods for TEM analysis of NIST s single-walled carbon nanotube Standard Reference Material
Published: 8/20/2009
Authors: Elisabeth Mansfield, Roy Howard Geiss, Jeffrey A Fagan
Abstract: The National Institute of Standards and Technology (NIST) is releasing a series of single-walled carbon nanotube Standard Reference Materials (SRMs) to provide consumers with a well-characterized material for their applications. The SWCNT Reference ...

10. Electron Microscope Study of Strain in InGaN Quantum Wells in GaN Nanowires
Published: 4/1/2009
Authors: Roy Howard Geiss, David Thomas Read
Abstract: GaN nanowires with InGaN quantum wells (QW) were grown on heated Si(111) substrates by molecular beam epitaxy (MBE) using elemental Ga and In and a radio-frequency-plasma N2 source. The growth procedures and the morphology of these nanowires have bee ...

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