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You searched on: Author: Mark Vaudin

Displaying records 1 to 10 of 83 records.
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1. Assessing Electron Backscattered Diffraction and Confocal Raman Microscopy Strain Mapping Using Wedge-indented Si
Published: 2/17/2016
Authors: Lawrence H Friedman, Mark D Vaudin, Stephan J Stranick, Gheorghe Stan, Yvonne Beatrice Gerbig, William A Osborn, Robert Francis Cook
Abstract: The accuracy of electron backscattered diffraction (EBSD) and confocal Raman microscopy (CRM) for small-scale strain mapping are assessed using the multi-axial strain field surrounding a wedge indentation in Si as a test vehicle. The strain field is ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=919078

2. Designing a standard for strain mapping: HR-EBSD analysis of SiGe thin film structures on Si
Published: 1/1/2015
Authors: Mark D Vaudin, William A Osborn, Lawrence H Friedman, Justin M Gorham, Robert Francis Cook, Victor Vartanian
Abstract: Patterned SiGe thin film structures, heteroepitaxially deposited on Si substrates, are investigated as potential reference standards to establish the accuracy of high resolution electron backscattered diffraction (HR-EBSD) strain measurement meth ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=916087

3. Accuracy and Resolution of Nanoscale Strain Measurement Techniques
Published: 3/26/2013
Authors: William A Osborn, Lawrence H Friedman, Mark D Vaudin, Stephan J Stranick, Michael S. Gaither, Justin M Gorham, Victor H Vartanian, Robert Francis Cook
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913178

4. Effect of Tin Doping on alpha-Fe2O3 Photoanodes for Water Splitting
Published: 6/28/2012
Authors: Christopher C. Bohn, Amit Kumar Agrawal, Erich C. Walter, Mark D Vaudin, Andrew A Herzing, Paul M Haney, Albert A. Talin, Veronika A Szalai
Abstract: Sputtered-deposited films of α-Fe2O3 of thickness 600 nm were investigated as photoanodes for solar water splitting and found to have photocurrents as high as 0.8 mA/cm2 at 1.23 V vs. the reversible hydrogen electrode (RHE). The incorporati ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911006

5. Micro-scale measurement and modeling of stress in silicon surrounding a tungsten-filled through-silicon via
Published: 10/11/2011
Authors: Ryan P. Koseski, William A Osborn, Stephan J Stranick, Frank W DelRio, Mark D Vaudin, Thuy Dao, Vance H. Adams, Robert Francis Cook
Abstract: The stress in silicon surrounding a tungsten-filled through-silicon via (TSV) is measured using confocal Raman microscopy line scans across the TSV both before and after etch removal of an oxide stack used as a mask to define the TSV during fabricati ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908908

6. Report on VAMAS Round Robin of ISO 13067: Microbeam Analysis,Electron Backscatter Diffraction,Measurement of Average Grain Size
Series: NIST Interagency/Internal Report (NISTIR)
Report Number: 7814
Published: 9/14/2011
Authors: Adam A Creuziger, Mark D Vaudin
Abstract: The authors recently participated in a round robin evaluation of a new ISO document draft, ISO 13067: Microbeam analysis ‹ Electron backscatter diffraction ‹ Measurement of average grain size. This report details the results of the study, some of th ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=909545

7. A semicontinuum model for Si(x)Ge(1-x) alloys: calculation of their elastic characteristics and the strain field at the free surface of a semi-infinite alloy
Published: 7/11/2011
Authors: Vinod K Tewary, Mark D Vaudin
Abstract: A semicontiuum Green‰s-function-based model is proposed for analysis of averaged mechanical characteristics of Si(x)Ge(1-x). The atomistic forces in the model are distributed at discrete lattice sites, but the Green‰s function is approximated by the ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907112

8. Enhanced Mass Transport in Ultra-Rapidly-Heated Ni/Si Thin-Film Multilayers
Published: 11/15/2009
Authors: Lawrence P. Cook, Richard E Cavicchi, Nabil Bassim, Susie Eustis, Winnie K Wong-Ng, Igor Levin, Ursula R Kattner, Carelyn E Campbell, Christopher B Montgomery, William F. Egelhoff Jr., Mark D Vaudin
Abstract: We have investigated multilayer and bilayer Ni/Si thin films by nano-differential scanning calorimetry (DSC) at ultra rapid scan rates, in a temperature-time regime not accessible with conventional apparatus. DSC experiments were completed at slower ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=900235

9. Measurement of heat capacity and enthalpy of formation of Nickel Silicide using Nano-calorimetry
Published: 11/2/2009
Authors: Ravi Kummamuru, Lito De La Rama, Liang Hu, Mark D Vaudin, Mikhail Efremov, Martin L Green, David A LaVan, Leslie Allen
Abstract: We present characterization of energetics of the reaction between nickel and silicon thin films using differential scanning nano-calorimetry (nano-DSC). For the first time, nano-DSC measurements up to 850 °C and of enthalpy of thin film reactions hav ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=902298

10. Stress-Intensity Factor and Toughness Measurement at the Nanoscale using Confocal Raman Microscopy
Published: 7/12/2009
Authors: Robert Francis Cook, Yvonne Beatrice Gerbig, Mark D Vaudin, Jeroen Schoenmaker, Stephan J Stranick
Abstract: A confocal Raman microscopy technique is presented that allows stress measurement at the nanoscale, which in turn enables measurement of stress-intensity factors (SIF) at crack tips and thus toughness to be estimated. Peak-fitting and super-resolutio ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=900910



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