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Author: Shannon Hill

Displaying records 1 to 10 of 18 records.
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1. EUV-Driven Carbonaceous Film Deposition and Its Photo-oxidation on a TiO2 Film Surface
Published: 9/23/2013
Authors: Nadir S. Faradzhev, Monica McEntee, John Yate, Shannon Bradley Hill, Thomas B Lucatorto
Abstract: We report the photo-deposition of a carbonaceous layer grown on a TiO2 thin film by EUV radiation-induced chemistry of adsorbed n-tetradecane and the subsequent photo-oxidation of this film. It is found by chemical analysis of the C layer that irradi ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913704

2. A synchrotron beamline for extreme-ultraviolet photoresist testing
Published: 9/30/2011
Authors: Charles S Tarrio, Steven E Grantham, Shannon Bradley Hill, Nadir S. Faradzhev, Lee J Richter, Chester Knurek, Thomas B Lucatorto
Abstract: Before being used in an extreme-ultraviolet (EUV) scanner, photoresists must first be evaluated for sensitivity and tested to ensure that they will not contaminate the scanner optics. The new NIST facility described here provides data on the contami ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908231

3. SURF III: A flexible Synchrotron Radiation Source for Radiometry and Research
Published: 9/1/2011
Authors: Uwe Arp, Charles W Clark, Lu Deng, Nadir S. Faradzhev, Alex P. Farrell, Mitchell L. Furst, Steven E Grantham, Edward Walter Hagley, Shannon Bradley Hill, Thomas B Lucatorto, Ping-Shine Shaw, Charles S Tarrio, Robert Edward Vest
Abstract: The calculability of synchrotron radiation (SR) makes electron storage rings wonderful light sources for radiometry. The broadband nature of SR allows coverage of the whole spectral region from the x-ray to the far-infrared. Compact low-energy storag ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=906750

4. The NIST EUV facility for advanced photoresist qualification using the witness-sample test
Published: 8/29/2011
Authors: Steven E Grantham, Charles S Tarrio, Shannon Bradley Hill, Lee J Richter, Thomas B Lucatorto, J. van Dijk, C. Kaya, N. Harned, R. Hoefnagels, M. Silova, J. Steinhoff
Abstract: Before being used in an extreme-ultraviolet (EUV) scanner, photoresists must first be qualified to ensure that they will not excessively contaminate the scanner optics or other parts of the vacuum environment of the scanner. At the National Institute ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908029

5. Optics contamination studies in support of high-throughput EUV lithography tools
Published: 3/25/2011
Authors: Shannon Bradley Hill, Fardina Asikin, Lee J Richter, Steven E Grantham, Charles S Tarrio, Thomas B Lucatorto, Sergiy Yulin, Mark Schurmann, Viatcheslav Nesterenko, Torsten Feigl
Abstract: We report on optics contamination rates induced by exposure to broad-bandwidth, high-intensity EUV radiation peaked near 8 nm in a new beamline at the NIST synchrotron. The peak intensity of 50 mW/mm2 allows extension of previous investigations of c ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908291

6. Measuring Pulse Energy With Solid-State Photodiodes
Published: 4/10/2009
Authors: Robert Edward Vest, Shannon Bradley Hill, Steven E Grantham
Abstract: With the advent of extreme ultraviolet lithography (EUVL) the measurement of the energy contained in pulses of short-wavelength radiation is becoming increasingly important. Even low average power sources can deliver pulses of radiation with high pea ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=840222

7. Magneto-Optical-Trap-Based, High Brightness Ion Source for Use as a Nanoscale Probe
Published: 8/21/2008
Authors: James L. Hanssen, Shannon Bradley Hill, Jon Orloff, Jabez J McClelland
Abstract: We report on the demonstration of a low emittance, high brightness ion source based on magneto-optically trapped neutral atoms. Our source has ion optical properties comparable to or better than those of the commonly used liquid metal ion source. I ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=620601

8. Quantitative Measurement of Outgas Products From EUV Photoresists
Published: 3/14/2008
Authors: Charles S Tarrio, Bruce A Benner Jr, Robert Edward Vest, Steven E Grantham, Shannon Bradley Hill, Thomas B Lucatorto, Jay H Hendricks, Patrick J Abbott, Greg Denbeaux, Alin Antohe, Chimaobi Mbanaso, Kevin Orbek
Abstract: The photon-stimulated emission of organic molecules from the photoresist during exposure is a serious problem for extreme- ultraviolet lithography (EUVL) because the adsorption of the outgassing products on the EUV optics can lead to carbonization an ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=842436

9. EUV testing of multilayer mirrors: critical issues
Published: 1/1/2006
Authors: Shannon Bradley Hill, I Ermanoski, Steven E Grantham, Charles S Tarrio, Thomas B Lucatorto, T. E Madey, S Bajt, M Chandhok, P Yan, Obert Wood, S Wurm, N V Edwards
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=101847

10. Saturation effects in solid state photodiodes and impact on EUVL pulse energy measurements,
Published: 1/1/2006
Authors: Robert Edward Vest, Shannon Bradley Hill, Steven E Grantham
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=101785



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