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Author: Stephan Stranick

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1. Stress mapping of micromachined polycrystalline silicon devices via confocal Raman microscopy
Published: 6/15/2014
Authors: Grant A Myers, Siddharth Hazra, Maarten de Boer, Chris A Michaels, Stephan J Stranick, Ryan P. Koseski, Robert Francis Cook, Frank W DelRio
Abstract: Stress mapping of micromachined polycrystalline silicon devices with components in various levels of uniaxial tension was performed. Confocal Raman microscopy was used to form two-dimensional maps of Raman spectral shifts, which exhibited variations ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915909

2. Comparison of the Properties of Cellulose Nanocrystals and Cellulose Nanofibrils Isolated From Bacteria, Tunicate, and Wood Processed Using Acid, Enzymatic, Mechanical, and Oxidative Methods
Published: 4/18/2014
Authors: Iulia Alisa Sacui, Jeffrey W Gilman, Ryan C Nieuwendaal, Stephan J Stranick, Henryk Szmacinski, Mehdi Jorfi, Christopher Weder, Johan Foster, Richard Olsson, Daniel Burnett
Abstract: This work describes the study and characterization of native cellulose nanocrystals and nanofibrils (CNCs, CNFs), whose crystallinity, morphology, aspect ratio, and surface chemistry depend on the raw material source and hydrolysis conditions. Me ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915137

3. Accuracy and Resolution of Nanoscale Strain Measurement Techniques
Published: 3/26/2013
Authors: William A Osborn, Lawrence H Friedman, Mark D Vaudin, Stephan J Stranick, Michael S. Gaither, Justin M Gorham, Victor Vartanian, Robert Francis Cook
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913178

4. Micro-scale measurement and modeling of stress in silicon surrounding a tungsten-filled through-silicon via
Published: 10/11/2011
Authors: Ryan P. Koseski, William A Osborn, Stephan J Stranick, Frank W DelRio, Mark D Vaudin, Thuy Dao, Vance H. Adams, Robert Francis Cook
Abstract: The stress in silicon surrounding a tungsten-filled through-silicon via (TSV) is measured using confocal Raman microscopy line scans across the TSV both before and after etch removal of an oxide stack used as a mask to define the TSV during fabricati ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908908

5. Direct observation of phase transformation anisotropy in indented silicon using confocal Raman microscopy
Published: 5/31/2011
Authors: Yvonne Beatrice Gerbig, Stephan J Stranick, Robert Francis Cook
Abstract: The theoretically-predicted anisotropic nature of the indentation phase transformation in silicon (Si) is observed directly in experiments using hyperspectral, confocal Raman microscopy. The anisotropy is reflected in the two-dimensional distribution ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=906105

6. Live, video-rate super-resolution microscopy using structured illumination and rapid GPU-based parallel processing
Published: 3/9/2011
Authors: Jonathan A. Lefman, Keana C K Scott, Javed Khan, Stephan J Stranick
Abstract: Structured illumination fluorescence microscopy is a powerful super resolution method that is capable of achieving a resolution below 100 nm. Each super-resolution image is computationally constructed from a set of differentially illuminated images. ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=906212

7. Comparison of the Sensitivity and Image Contrast in Spontaneous Raman and Coherent Stokes Raman Scattering Microscopy of Geometry Controlled Samples
Published: 2/9/2011
Authors: Hyun Min Kim, Chris A Michaels, Garnett W Bryant, Stephan J Stranick
Abstract: We experimentally compare the performance and contrast differences between spontaneous and coherent Stokes Raman scattering microscopy. We demonstrate the differences on a series of geometry controlled samples that range in complexity from a point (a ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=906194

8. Measurement of residual stress field anisotropy at indentations in silicon
Published: 6/23/2010
Authors: Yvonne Beatrice Gerbig, Stephan J Stranick, Robert Francis Cook
Abstract: The residual stress field around spherical indentations on single crystal silicon (Si) of different crystallographic orientation is mapped by confocal Raman microscopy. All orientations exhibit an anisotropic stress pattern with an orientation spec ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905445

9. Stress-Intensity Factor and Toughness Measurement at the Nanoscale using Confocal Raman Microscopy
Published: 7/12/2009
Authors: Robert Francis Cook, Yvonne Beatrice Gerbig, Mark D Vaudin, Jeroen Schoenmaker, Stephan J Stranick
Abstract: A confocal Raman microscopy technique is presented that allows stress measurement at the nanoscale, which in turn enables measurement of stress-intensity factors (SIF) at crack tips and thus toughness to be estimated. Peak-fitting and super-resolutio ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=900910

10. Effect of crystallographic orientation on phase transformations during indentation of silicon
Published: 3/9/2009
Authors: Yvonne Beatrice Gerbig, Dylan Morris, Stephan J Stranick, Mark D Vaudin, Robert Francis Cook
Abstract: In a statistical nanoindentation study using a spherical probe, the effect of crystallographic orientation on the phase transformation of silicon (Si) was investigated. The presence and pressure at which events associated with phase transformation oc ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=854143



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