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Author: Lee Richter
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1. Attachment of a Reduction-Oxidative Active Diruthenium Compound to Au and Si Surfaces by ,ClickŠ
Sujitra Jeanie Pookpanratana, Joseph William Robertson, Curt A Richter, Christina Ann Hacker, Lee J Richter, Julia Savchenko, Steven Cummings, Tong Ren
We report the formation of molecular monolayers containing redox-active diruthenium(II,III) compound
to gold and silicon surfaces via ,clickŠ chemistry. The use of Cu-catalyzed azide-alkyne
cycloaddition enables modular design of molecular surfa ...
2. Vertically Segregated Structure and Properties of small molecule-polymer blend semiconductors for organic thin film transistors
Nayool Shin, Dean M DeLongchamp, Jihoon Kang, Regis J Kline, Lee J Richter, Vivek M Prabhu, Balaji Purushothamanc, John E Anthony, Do Y Yoon
The phase-segregated structure and the electrical properties of thin film blends of the small-molecule semiconductor fluorinated 5,11-bis(triethylsilylethynyl) anthradithiophene with insulating binder polymers were studied for organic thin film trans ...
3. 3-Aminopropyltriethoxysilane Functionalization and Biotinylation of 4H-SiC for Immobilization of Streptavidin
Elissa Heather Williams, Albert Davydov, John A Schreifels, Mulpuri V. Rao, Abhishek Motayed, Siddarth Sundaresan, Peter Bocchini, Lee J Richter, Gheorghe Stan, Kristen L Steffens, Rebecca A Zangmeister
(0001) 4H-SiC was functionalized with 3-aminopropyltriethoxysilane (APTES) and subsequently biotinylated for the immobilization of streptavidin. Atomic force microscopy (AFM), x-ray photoelectron spectroscopy (XPS), ellipsometry, fluorescence microsc ...
4. Surface Plasmon Polariton Raman Microscopy
Hae-Wook Yoo, Lee J Richter, Hee-Tae Jung, Chris A Michaels
We report surface plasmon polariton (SPP) mediated Raman microscopy on dielectric films in contact with a Ag layer at 785 nm with spatial resolution approaching the optical diffraction limit and reasonable spectral acquisition times. The excitation ...
5. A synchrotron beamline for extreme-ultraviolet photoresist testing
Charles S Tarrio, Steven E Grantham, Shannon Bradley Hill, Nadir S. Faradzhev, Lee J Richter, Chester Knurek, Thomas B Lucatorto
Before being used in an extreme-ultraviolet (EUV) scanner, photoresists must first be evaluated for sensitivity and tested to ensure that they will not contaminate the scanner optics. The new NIST facility described here provides data on the contami ...
6. Molecular Order in High-Efficiency Polymer/Fullerene Bulk Heterojunction Solar Cells
Matthew R. Hammond, Regis J Kline, Andrew A Herzing, Lee J Richter, David Germack, Hyun W. Ro, Christopher L Soles, Daniel A Fischer, Tao Xu, Luping Yu, Michael F. Toney, Dean M DeLongchamp
We report quantitative measurements of ordering, molecular orientation, and nanoscale morphology in the active layer of bulk heterojunction organic photovoltaic cells based on a thieno[3,4-b]thiophene-alt-benzodithiophene copolymer (PTB7), which has ...
7. The NIST EUV facility for advanced photoresist
qualification using the witness-sample test
Steven E Grantham, Charles S Tarrio, Shannon Bradley Hill, Lee J Richter, Thomas B Lucatorto, J. van Dijk, C. Kaya, N. Harned, R. Hoefnagels, M. Silova, J. Steinhoff
Before being used in an extreme-ultraviolet (EUV) scanner, photoresists must first be qualified to ensure that they will not excessively contaminate the scanner optics or other parts of the vacuum environment of the scanner. At the National Institute ...
8. Flexible Memristors Fabricated through Sol-Gel Hydrolysis
Joseph Leo Tedesco, Nadine Gergel-Hackett, Laurie Stephey, Madelaine Herminia Hernandez, Andrew A Herzing, Lee J Richter, Christina Ann Hacker, Joseph J Kopanski, Jan Obrzut, Curt A Richter
9. Optics contamination studies in support of high-throughput EUV lithography tools
Shannon Bradley Hill, Fardina Asikin, Lee J Richter, Steven E Grantham, Charles S Tarrio, Thomas B Lucatorto, Sergiy Yulin, Mark Schurmann, Viatcheslav Nesterenko, Torsten Feigl
We report on optics contamination rates induced by exposure to broad-bandwidth, high-intensity EUV radiation peaked near 8 nm in a new beamline at the NIST synchrotron. The peak intensity of 50 mW/mm2 allows extension of previous investigations of c ...
10. Conduction and Loss Mechanisms in Flexible Oxide-Based Memristors
Joseph Leo Tedesco, Nadine Gergel-Hackett, Laurie Stephey, Andrew A Herzing, Madelaine Herminia Hernandez, Christina Ann Hacker, Jan Obrzut, Lee J Richter, Curt A Richter
In order to study the conduction
and loss mechanisms behind their operation, flexible sol-gel based memristors were fabricated with differing oxide film thicknesses and device sizes. XPS, TEM, EELS, and VASE measurements indicated the oxide was amor ...