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You searched on: Author: Hui Zhou

Displaying records 1 to 10 of 44 records.
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1. Enabling Quantitative Optical Imaging for In-die-capable Critical Dimension Targets
Published: 4/4/2016
Authors: Bryan M Barnes, Mark Alexander Henn, Martin Y Sohn, Hui Zhou, Richard M Silver
Abstract: Dimensional scaling trends will eventually bring the semiconductor critical dimensions (CDs) down to only a few atoms in width. New optical techniques are required to address intra-die variability for these CDs using sufficiently small in-die metrolo ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=920551

2. Optimizing Hybrid Metrology: Rigorous Implementation of Bayesian and Combined Regression.
Published: 11/12/2015
Authors: Mark Alexander Henn, Richard M Silver, John S Villarrubia, Nien F Zhang, Hui Zhou, Bryan M Barnes, Andras Vladar, Bin Ming
Abstract: Hybrid metrology, e.g. the combination of several measurement techniques to determine critical dimensions, is an important approach to meet the needs of semiconductor industry. A proper use of hybrid metrology may not only yield more reliable estimat ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=918701

3. Deep-subwavelength Nanometric Image Reconstruction using Fourier Domain Optical Normalization
Published: 11/5/2015
Authors: Jing Qin, Richard M Silver, Bryan M Barnes, Hui Zhou, Ronald G Dixson, Mark Alexander Henn
Abstract: Quantitative optical measurements of deep sub-wavelength, three-dimensional, nanometric structures with sensitivity to sub-nanometer details address an ubiquitous measurement challenge. A Fourier domain normalization approach is used in the Fourier ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=914423

4. Quantitative tool characterization of a 193 nm scatterfield microscope
Published: 9/9/2015
Authors: Martin Y Sohn, Bryan M Barnes, Hui Zhou, Richard M Silver
Abstract: Optical microscope tool characterization has been investigated for the quantitative measurements of deep sub-wavelength features using a Fourier plane normalization method. The NIST 193 nm scatterfield microscope operating with an ArF Excimer laser, ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=919267

5. Use of Bayesian Statistics to Improve Optical Measurement Uncertainty by Combined Multi-Tool Metrology
Published: 6/25/2015
Authors: Nien F Zhang, Richard M Silver, Hui Zhou, Bryan M Barnes
Abstract: Recently, there has been significant research investigating new optical technologies for dimensional metrology of features 32 nm in critical dimension and smaller. When modeling optical measurements a library of curves is assembled through the simula ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=918375

6. The effect of systematic errors on the hybridization of optical critical dimension measurements
Published: 6/21/2015
Authors: Mark Alexander Henn, Richard M Silver, Nien F Zhang, Hui Zhou, Bryan M Barnes
Abstract: In hybrid metrology two or more measurements of the same measurand are combined to provide a more reliable result that ideally incorporates the individual strengths of each of the measurement methods. While these multiple measurements may come from d ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=918395

7. Scatterfield Microscopy and the Fundamental Limits of Optical Defect Metrology
Published: 4/14/2015
Authors: Richard M Silver, Bryan M Barnes, Martin Y Sohn, Hui Zhou
Abstract: Defect inspection remains a critical manufacturing challenge due to the competing requirements between throughput and very high resolution. Currently only optical methods provide an acceptable solution, although there are a number of process layers ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=918260

8. Optimizing Hybrid Metrology: Rigorous Implementation of Bayesian and Combined Regression
Published: 3/19/2015
Authors: Mark Alexander Henn, Richard M Silver, Nien F Zhang, Hui Zhou, Bryan M Barnes, Bin Ming, Andras Vladar, John S Villarrubia
Abstract: Hybrid metrology, e.g. the combination of several measurement techniques to determine critical dimensions, is an important approach to meet the needs of semiconductor industry. A proper use of hybrid metrology may not only yield more reliable estimat ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=918217

9. Effects of wafer noise on the detection of 20 nm defects using optical volumetric inspection
Published: 2/11/2015
Authors: Bryan M Barnes, Francois R. Goasmat, Martin Y Sohn, Hui Zhou, Andras Vladar, Richard M Silver
Abstract: Patterning imperfections in semiconductor device fabrication may either be noncritical [e.g., line edge roughness (LER)] or critical, such as defects that impact manufacturing yield. As the sizes of the pitches and linewidths decrease in lithography, ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=916347

10. Optimizing Hybrid Metrology through a Consistent Multi-Tool Parameter Set and Uncertainty Model
Published: 4/14/2014
Authors: Richard M Silver, Bryan M Barnes, Nien F Zhang, Hui Zhou, Andras Vladar, John S Villarrubia, Regis J Kline, Daniel Franklin Sunday, Alok Vaid
Abstract: There has been significant interest in hybrid metrology as a novel method for reducing overall measurement uncertainty and optimizing measurement throughput (speed) through rigorous combinations of two or more different measurement techniques into a ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915846



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