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You searched on: Author: Hui Zhou

Displaying records 1 to 10 of 37 records.
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1. Optimizing Hybrid Metrology: Rigorous Implementation of Bayesian and Combined Regression
Published: 3/19/2015
Authors: Mark Alexander Henn, Richard M Silver, Nien F Zhang, Hui Zhou, Bryan M Barnes, Bin Ming, Andras Vladar, John S Villarrubia
Abstract: Hybrid metrology, e.g. the combination of several measurement techniques to determine critical dimensions, is an important approach to meet the needs of semiconductor industry. A proper use of hybrid metrology may not only yield more reliable estimat ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=918217

2. Effects of wafer noise on the detection of 20 nm defects using optical volumetric inspection
Published: 2/11/2015
Authors: Bryan M Barnes, Francois R. Goasmat, Martin Y Sohn, Hui Zhou, Andras Vladar, Richard M Silver
Abstract: Patterning imperfections in semiconductor device fabrication may either be noncritical [e.g., line edge roughness (LER)] or critical, such as defects that impact manufacturing yield. As the sizes of the pitches and linewidths decrease in lithography, ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=916347

3. Optimizing Hybrid Metrology through a Consistent Multi-Tool Parameter Set and Uncertainty Model
Published: 4/14/2014
Authors: Richard M Silver, Bryan M Barnes, Nien F Zhang, Hui Zhou, Andras Vladar, John S Villarrubia, Regis J Kline, Daniel Franklin Sunday, Alok Vaid
Abstract: There has been significant interest in hybrid metrology as a novel method for reducing overall measurement uncertainty and optimizing measurement throughput (speed) through rigorous combinations of two or more different measurement techniques into a ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915846

4. Optical volumetric inspection of sub-20 nm patterned defects with wafer noise
Published: 4/2/2014
Authors: Bryan M Barnes, Francois R. Goasmat, Martin Y Sohn, Hui Zhou, Richard M Silver, Andras Vladar, Abraham Arceo
Abstract: We have previously introduced a new data analysis method that more thoroughly utilizes scattered optical intensity data collected during defect inspection using bright-field microscopy. This volumetric approach allows conversion of focus resolved 2-D ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915807

5. Three-dimensional deep sub-wavelength defect detection using (lambda) = 193 nm optical microscopy
Published: 10/25/2013
Authors: Bryan M Barnes, Martin Y Sohn, Francois R. Goasmat, Hui Zhou, Andras Vladar, Richard M Silver, Abraham Arceo
Abstract: Identifying defects in photolithographic patterning is a persistent challenge in semiconductor manufacturing. Well-established optical methods in current use are jeopardized by upcoming sub-20 nm device dimensions. Volumetric processing of focus-reso ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=914244

6. Quantitative microscope characterization for parametric measurements with sub-nm parametric uncertainties
Published: 9/23/2013
Authors: Bryan M Barnes, Jing Qin, Hui Zhou, Richard M Silver
Abstract: Recently, a new technique called Fourier normalization has enabled the parametric fitting of optical images with multiple or even a continuum of spatial frequencies. Integral to the performance of this methodology is the characterization of the high ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=914714

7. Fourier Domain Optical Tool Normalization for Quantitative Parametric Image Reconstruction
Published: 9/5/2013
Authors: Jing Qin, Richard M Silver, Bryan M Barnes, Hui Zhou, Francois R. Goasmat
Abstract: There has been much recent work in developing advanced optical metrology methods that use imaging optics for critical dimension measurements and defect detection. Sensitivity to nanometer scale changes has been observed when measuring critical dimens ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913587

8. Harnessing 3D Scattered Optical Fields for sub-20 nm Defect Detection
Published: 6/24/2013
Authors: Bryan M Barnes, Martin Y Sohn, Francois R. Goasmat, Hui Zhou, Richard M Silver, Abraham Arceo
Abstract: Experimental imaging at =193 nm of sub-resolved defects performed at several focus positions yields a volume of spatial and intensity data. Defects are located in a differential volume, given a reference, with up to 5x increase in sensitivity ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913510

9. 3-D Optical Metrology of Finite sub-20nm Dense Arrays With sub-nanometer Parametric Uncertainties
Published: 6/23/2013
Authors: Jing Qin, Hui Zhou, Bryan M Barnes, Ronald G Dixson, Richard M Silver
Abstract: A new approach that involves parametric fitting of 3-D scattered field with electromagnetic simulation, Fourier domain normalization, and uncertainties analysis is presented to rigorously analyze 3-D through-focus optical images of targets that scatt ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913511

10. Enhancing 9 nm Node Dense Patterned Defect Optical Inspection using Polarization, Angle, and Focus
Published: 4/10/2013
Authors: Bryan M Barnes, Francois R. Goasmat, Martin Y Sohn, Hui Zhou, Abraham Arceo
Abstract: To measure the new SEMATECH 9 nm node Intentional Defect Array (IDA) and subsequent small, complex defects, a methodology has been used to exploit the rich information content generated when simulating or acquiring several images of sub-wavelength-si ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913542



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