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You searched on: Author: Richard Silver

Displaying records 1 to 10 of 125 records.
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1. Enabling Quantitative Optical Imaging for In-die-capable Critical Dimension Targets
Published: 4/4/2016
Authors: Bryan M Barnes, Mark Alexander Henn, Martin Y Sohn, Hui Zhou, Richard M Silver
Abstract: Dimensional scaling trends will eventually bring the semiconductor critical dimensions (CDs) down to only a few atoms in width. New optical techniques are required to address intra-die variability for these CDs using sufficiently small in-die metrolo ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=920551

2. Low temperature silicon epitaxy on H terminated Si (100) surfaces
Published: 3/31/2016
Authors: Xiao Deng, Pradeep Narayanan Namboodiri, Kai Li, Xiqiao Wang, Gheorghe Stan, Alline F Myers, Xinbin Cheng, Tongbao Li, Richard M Silver
Abstract: Silicon on silicon growth at low temperatures has become increasing important due to its use to encapsulate buried nanoscale dopant devices. The performance of atomic scale devices is fundamentally affected by the quality of the silicon matrix in whi ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=920036

3. Optimizing Hybrid Metrology: Rigorous Implementation of Bayesian and Combined Regression.
Published: 11/12/2015
Authors: Mark Alexander Henn, Richard M Silver, John S Villarrubia, Nien F Zhang, Hui Zhou, Bryan M Barnes, Andras Vladar, Bin Ming
Abstract: Hybrid metrology, e.g. the combination of several measurement techniques to determine critical dimensions, is an important approach to meet the needs of semiconductor industry. A proper use of hybrid metrology may not only yield more reliable estimat ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=918701

4. Deep-subwavelength Nanometric Image Reconstruction using Fourier Domain Optical Normalization
Published: 11/5/2015
Authors: Jing Qin, Richard M Silver, Bryan M Barnes, Hui Zhou, Ronald G Dixson, Mark Alexander Henn
Abstract: Quantitative optical measurements of deep sub-wavelength, three-dimensional, nanometric structures with sensitivity to sub-nanometer details address an ubiquitous measurement challenge. A Fourier domain normalization approach is used in the Fourier ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=914423

5. Quantitative tool characterization of a 193 nm scatterfield microscope
Published: 9/9/2015
Authors: Martin Y Sohn, Bryan M Barnes, Hui Zhou, Richard M Silver
Abstract: Optical microscope tool characterization has been investigated for the quantitative measurements of deep sub-wavelength features using a Fourier plane normalization method. The NIST 193 nm scatterfield microscope operating with an ArF Excimer laser, ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=919267

6. Use of Bayesian Statistics to Improve Optical Measurement Uncertainty by Combined Multi-Tool Metrology
Published: 6/25/2015
Authors: Nien F Zhang, Richard M Silver, Hui Zhou, Bryan M Barnes
Abstract: Recently, there has been significant research investigating new optical technologies for dimensional metrology of features 32 nm in critical dimension and smaller. When modeling optical measurements a library of curves is assembled through the simula ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=918375

7. The effect of systematic errors on the hybridization of optical critical dimension measurements
Published: 6/21/2015
Authors: Mark Alexander Henn, Richard M Silver, Nien F Zhang, Hui Zhou, Bryan M Barnes
Abstract: In hybrid metrology two or more measurements of the same measurand are combined to provide a more reliable result that ideally incorporates the individual strengths of each of the measurement methods. While these multiple measurements may come from d ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=918395

8. Scatterfield Microscopy and the Fundamental Limits of Optical Defect Metrology
Published: 4/14/2015
Authors: Richard M Silver, Bryan M Barnes, Martin Y Sohn, Hui Zhou
Abstract: Defect inspection remains a critical manufacturing challenge due to the competing requirements between throughput and very high resolution. Currently only optical methods provide an acceptable solution, although there are a number of process layers ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=918260

9. Optimizing Hybrid Metrology: Rigorous Implementation of Bayesian and Combined Regression
Published: 3/19/2015
Authors: Mark Alexander Henn, Richard M Silver, Nien F Zhang, Hui Zhou, Bryan M Barnes, Bin Ming, Andras Vladar, John S Villarrubia
Abstract: Hybrid metrology, e.g. the combination of several measurement techniques to determine critical dimensions, is an important approach to meet the needs of semiconductor industry. A proper use of hybrid metrology may not only yield more reliable estimat ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=918217

10. Effects of wafer noise on the detection of 20 nm defects using optical volumetric inspection
Published: 2/11/2015
Authors: Bryan M Barnes, Francois R. Goasmat, Martin Y Sohn, Hui Zhou, Andras Vladar, Richard M Silver
Abstract: Patterning imperfections in semiconductor device fabrication may either be noncritical [e.g., line edge roughness (LER)] or critical, such as defects that impact manufacturing yield. As the sizes of the pitches and linewidths decrease in lithography, ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=916347



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