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Author: Kin Cheung

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1. On the Contribution of Bulk Defects on Charge Pumping Current
Published: 10/1/2012
Authors: Jason T Ryan, Richard G. Southwick, Jason P Campbell, Kin P Cheung, John S Suehle
Abstract: Frequency dependent charge pumping (FD-CP) has emerged as a popular technique for studying the spatial and energetic distribution of defect centers in advanced high-k gate stacks. However, conflicting interpretations of the charge pumping frequency - ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911823

2. Physical Model for Random Telegraph Noise Amplitudes and Implications
Published: 6/12/2012
Authors: Richard G. Southwick, Kin P Cheung, Jason P Campbell, Serghei Drozdov, Jason T Ryan, John S Suehle, Anthony Oates
Abstract: Random Telegraph Noise (RTN) has been shown to surpass random dopant fluctuations as a cause for decananometer device variability, through the measurement of a large number of ultra-scaled devices [1]. The most worrisome aspect of RTN is the tail of ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911514

3. Channel Length-Dependent Series Resistance?
Published: 6/10/2012
Authors: Jason P Campbell, Kin P Cheung, Serghei Drozdov, Richard G. Southwick, Jason T Ryan, Tony Oates, John S Suehle
Abstract: A recently developed series resistance (RSD) extraction procedure from a single nanoscale device is shown to be highly robust. Despite these virtues, the technique unexpectedly results in a channel length-dependent RSD which is observed across a wide ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911515

4. Spectroscopic Charge Pumping in the Presence of High Densities of Bulk Dielectric Traps
Published: 5/31/2012
Authors: Jason T Ryan, Richard G. Southwick, Jason P Campbell, Kin P Cheung, Chadwin Young
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911208

5. High Speed Endurance and Switching Measurements for Memristive Switches
Published: 3/6/2012
Authors: Pragya Rasmi Shrestha, Adaku Ochia, Kin P Cheung, Jason P Campbell, Helmut Baumgart, Gary Harris
Abstract: Accurate capture of the Set/Reset characteristics is a necessary but challenging task for the development of memristive switches. Here we describe and demonstrate a technique capable of meeting this challenge. This technique can measure the transient ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910851

6. ITRS Chapter: Process Integration, Devices, and Structures
Published: 1/12/2012
Authors: Kwok Ng, Kin P Cheung
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910568

7. Experimentally Based Methodology for Charge Pumping Bulk Defect Trapping Correction
Published: 12/15/2011
Authors: Jason T Ryan, Richard G. Southwick, Jason P Campbell, Kin P Cheung, Chadwin Young, John S Suehle
Abstract: We develop a simple experimental approach to remove bulk trap contributions from charge pumping data collected on devices which suffer from large amounts of bulk dielectric electron trapping. The approach is more desirable and easier to implemen ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911205

8. When Does a Circuit Really Fail?
Published: 12/15/2011
Authors: Jason T Ryan, Lan Wei, Jason P Campbell, Richard G. Southwick, Kin P Cheung, Tony Oates, Phillip Wong, John S Suehle
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911206

9. TaOx Memristive Devices with Ferromagnetic Electrodes
Published: 12/7/2011
Authors: Hyuk-Jae Jang, Pragya Rasmi Shrestha, Oleg A Kirillov, Helmut Baumgart, Kin P Cheung, Oana Jurchescu, Curt A Richter
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910359

10. On the “U-Shaped” Continuum of Band Edge States at the Si/SiO2 Interface
Published: 12/1/2011
Authors: Jason T Ryan, Richard G. Southwick, Jason P Campbell, Kin P Cheung, Chadwin Young
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911207