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Author: Kin Cheung

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1. Constant Shape Factor Frequency Modulated Charge Pumping (FMCP)
Published: 3/3/2014
Authors: Jason T Ryan, Jason P Campbell, Jibin Zou, Kin P Cheung, Richard Southwick, Anthony Oates, Rue Huang
Abstract: Abstract, We examine the seemingly frequency-dependent gate leakage current component of frequency-modulated charge pumping and show it to be a measurement artifact. If untreated, this results in erroneous defect density extractions. We present a co ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915082

2. Dependence of the Filament Resistance on the Duration of Current Overshoot
Published: 3/3/2014
Authors: Pragya Rasmi Shrestha, David Malien Nminibapiel, Jason P Campbell, Kin P Cheung, Helmut Baumgart, Shweta Deora, G. Bersuker
Abstract: The characteristics of a conductive filament in HfO2 RRAM is shown to be dependent on the duration of the current compliance overshoot, which may occur during the filament formation process. In addition to the overshoot amplitude, the filament resist ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915215

3. Fast-Capacitance for Advanced Device Characterization
Published: 3/3/2014
Authors: Pragya Rasmi Shrestha, Kin P Cheung, Jason T Ryan, Jason P Campbell, Helmut Baumgart
Abstract: Fast-CV measurements are frequently being used to study transient phenomena associated with advanced devices. In this study, we show that many artifacts plague this measurement and then provide a proper method to legitimize fast-CV measurements as tr ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=914753

4. Unusual Bias Temperature Instability in SiC DMOSFET
Published: 3/3/2014
Authors: Zakariae Chbili, Kin P Cheung, Jason P Campbell, John S Suehle, D. E Ioannou, Aivars Lelis, Sei-Hyung Ryu
Abstract: We observe an unusual instability in the SiC DMOSFET transistor characteristics. From a series of bias conditions at elevated temperatures, we conclude that a high density of hole traps in the oxide near the SiO2/SiC interface are responsible.
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=914921

5. Reliability Monitoring For Highly Leaky Devices
Published: 5/31/2013
Authors: Jason T Ryan, Jason P Campbell, Kin P Cheung, John S Suehle, Richard Southwick, Anthony Oates
Abstract: We demonstrate a new charge pumping (CP) methodology, frequency modulated CP (FMCP), that robustly treats metrology challenges associated with high gate leakage current. By moving to an AC coupled measurement, we are able to easily resolve small CP s ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913575

6. The Series Resistance Component of Hot Carrier Degradation in Ultra-Short Channel Devices
Published: 4/22/2013
Authors: Jason P Campbell, Kin P Cheung, Anthony Oates
Abstract: Our measurements reveal that, similar to much larger power device geometries, hot carrier degradation in ultra-short channel devices involves (1) presumably defect generation-based parametric shifts in threshold voltage/transconductance and (2) a ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913416

7. Frequency Dependent Charge Pumping -- A Defect Depth Profiling Tool?
Published: 1/31/2013
Authors: Jason T Ryan, Richard G. Southwick, Jason P Campbell, Kin P Cheung, John S Suehle
Abstract: We investigate the validity of using frequency-dependent charge pumping (FD-CP) to determine bulk defect depth distributions. Using simple physical arguments we conclude that: (1) the effective tunneling length to a bulk defect can be very different ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913573

8. SERIES RESISTANCE: A MONITOR FOR HOT CARRIER STRESS
Published: 1/31/2013
Authors: Jason P Campbell, Serghei Drozdov, Kin P Cheung, Richard G. Southwick, Jason T Ryan, John S Suehle, Anthony Oates
Abstract: In this work, we examine a series resistance extraction technique which yields accurate values from single nano-scale devices. The series resistance values, derived from this extraction technique, are shown to be sensitive to hot carrier degradation ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913576

9. Current Compliance Circuit to Improve Variation in ON State Characteristics and to Minimize RESET Current
Published: 10/7/2012
Authors: Pragya Rasmi Shrestha, Adaku Ochia, Jason P Campbell, Canute Irwin Vaz, Jihong Kim, Kin P Cheung, Helmut Baumgart, Gary Harris
Abstract: The wide distribution of ON and OFF values and high SET current in resistive memory is attributed to the high current overshoot during the SET process. In this paper we show a circuit which is capable of precisely limiting the current during SET proc ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912998

10. On the Contribution of Bulk Defects on Charge Pumping Current
Published: 10/1/2012
Authors: Jason T Ryan, Richard G. Southwick, Jason P Campbell, Kin P Cheung, John S Suehle
Abstract: Frequency dependent charge pumping (FD-CP) has emerged as a popular technique for studying the spatial and energetic distribution of defect centers in advanced high-k gate stacks. However, conflicting interpretations of the charge pumping frequency - ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911823



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