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Author: Tam Duong

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1. Physics-based Electro-thermal Saber Model and Parameter Extraction for High-Voltage SiC Buffer IGBTs
Published: 9/15/2014
Authors: Tam Hoang Duong, Allen R Hefner Jr, Jose Miguel Ortiz, Sei-Hyung Ryu , Edward VanBrunt, Lin Cheng, Scott Allen, John W. Palmour
Abstract: The purpose of this paper is to present a physics-based electro-thermal Saber model and parameter extraction sequence for high-voltage SiC buffer layer n-channel insulated gate bipolar transistors (IGBTs). This model was developed by modifying and ex ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=916319

2. Electro-Thermal Simulation and Design of a 60 A, 4.5 kV Half-Bridge Si IGBT/SiC JBS Hybrid Power Module
Published: 9/15/2012
Authors: Tam Hoang Duong, Allen R Hefner Jr, Karl Hobart
Abstract: This paper presents the results from a parametric simulation study that was conducted to optimize the design of a high-current 4.5 kV half-bridge Si-IGBT/SiC-JBS hybrid module for medium voltage hard-switched power conversion as well as to compare th ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911712

3. Performance of Hybrid 4.5kV SiC JBS Freewheeling Diode and Si IGBT
Published: 9/16/2011
Authors: Karl Hobart, Eugene Imhoff, F. J. Kub, Allen R Hefner Jr, Tam Hoang Duong, Jose Miguel Ortiz, Sei-Hyung Ryu, David Grider, Scott G Leslie, Jerry Sherbondy, B Ray
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=909897

4. Comparison of 4.5 kV SiC JBS and Si PiN Diodes for 4.5 kV Si IGBT Anti-parallel Diode Applications
Published: 3/10/2011
Authors: Tam Hoang Duong, Allen R Hefner Jr, Karl Hobart, Sei-Hyung Ryu, David Grider, David W. Berning, Jose Miguel Ortiz, Eugene Imhoff, Jerry Sherbondy
Abstract: A new 60 A, 4.5 kV SiC JBS diode is presented and its performance is compared to Si PiN diodes used as the anti-parallel diode for 4.5 kV Si IGBTs. The current-voltage, capacitance-voltage, reverse recovery, and reverse leakage characteristics of bot ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907368

5. Modeling the Inter-Electrode Capacitances of Si CoolMOSTM Transistors for Circuit Simulation in High Efficiency Power Systems
Published: 9/12/2010
Authors: Nanying Yang, Jose Miguel Ortiz, Tam Hoang Duong, Allen R Hefner Jr, Kathleen Meehan
Abstract: The CoolMOSTM transistor is a novel power MOSFET type device that utilizes a super-junction embedded within its drift region in order to improve the trade-off between on-resistance and breakdown voltage. The super-junction results in unique inter-e ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905983

6. Automated Parameter Extraction Software for Silicon and High-Voltage Silicon Carbide Power Diodes
Published: 6/24/2010
Authors: Nanying Yang, Tam Hoang Duong, Jeong-O Jeong, Jose Miguel Ortiz, Allen R Hefner Jr, Kathleen Meehan
Abstract: This paper presents an automated parameter extraction software tool developed for constructing Silicon (Si) and Silicon Carbide (SiC) power diode models, which is called DIode Model Parameter extrACtion Tools (DIMPACT). This software tool extracts th ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905858

7. High-Voltage Capacitance Measurement System for SiC Power MOSFETs
Published: 9/24/2009
Authors: Parrish Ralston, Tam Hoang Duong, Nanying Yang, David W. Berning, Colleen E. Hood, Allen R Hefner Jr, Kathleen Meehan
Abstract: Adequate modeling of a power MOSFET is dependent on accurate characterization of the inter-electrode capacitances. With the advent of high voltage silicon carbide (SiC) power MOSFETs, it has become important to develop a measurement system that can ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=903137

8. Electro-Thermal Simulation of a 100 A, 10 kV Half-Bridge SiC MOSFET/JBS Power Module
Published: 6/13/2008
Authors: Tam Hoang Duong, Jose Miguel Ortiz, R. N Raju, Allen R Hefner Jr
Abstract: This paper presents the results from a parametric simulation study that was conducted to optimize the performance of 100 A, 10 kV, 20 kHz half-bridge SiC MOSFET/JBS power modules. The power modules are being developed by the DARPA WBGS-HPE Phase II p ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=33006

9. Thermal Network Component Models for 10 kV SiC Power Module Packages
Published: 6/13/2008
Authors: Jose Miguel Ortiz, Madelaine Herminia Hernandez, Tam Hoang Duong, Scott G Leslie, Allen R Hefner Jr
Abstract: The DARPA WBGS-HPE program is developing 100 A, 10 kV SiC power modules to demonstrate the viability of a 2.75 MVA Solid State Power Substation that uses 10 kV, 20 kHz switching-capable devices. Thermal network component models for these modules are ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=33007

10. High-Voltage Isolated Gate Drive Circuit for 10 kV, 100 A SiC MOSFET/JBS Power Modules
Published: 6/2/2008
Authors: David W. Berning, Tam Hoang Duong, Jose Miguel Ortiz, Angel Rivera, Allen R Hefner Jr
Abstract: A high-current, high-voltage-isolated gate drive circuit developed for characterization of high-voltage, high-frequency 10 kV, 100 A SiC MOSFET/JBS half-bridge power modules is presented and described. Gate driver characterization and simulation have ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=33062



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