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You searched on: Author: Jason Ryan

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1. Frequency Modulated Charge Pumping with Extremely High Gate Leakage
Published: 2/13/2015
Authors: Jason T Ryan, Jibin Zou, Jason P Campbell, Richard Southwick, Kin P Cheung, Anthony Oates, Rue Huang
Abstract: Charge pumping (CP) has proven itself as one of the most utilitarian methods to quantify defects in metal-oxide-semiconductor devices. In the presence of low to moderate gate leakage, CP quantification is most often implemented via a series of measur ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915883

2. Device-Level Experimental Observations of NBTI-Induced Random Timing Jitter
Published: 12/13/2014
Authors: Guangfan Jiao, Jiwu Lu, Jason P Campbell, Jason T Ryan, Kin P Cheung, Chadwin D. Young, Gennadi Bersuker
Abstract: This work utilizes device-level eye-diagram measurements to examine NBTI-induced changes in timing jitter at circuit speeds. The measured jitter is examined for a variety of ring-oscillator and pseudo-random gate patterns. The ring-oscillator pattern ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=916021

3. PBTI-Induced Random Timing Jitter in Circuit-Speed Random Logic
Published: 11/13/2014
Authors: Jiwu Lu, Canute Irwin Vaz, Guangfan Jiao, Jason P Campbell, Jason T Ryan, Kin P Cheung, Gennadi Bersuker, Chadwin D. Young
Abstract: Accurate reliability predictions of real world digital logic circuits rely heavily on the relevancy of device level testing. In the case of bias temperature instability (BTI), where recovery plays a significant role, a leap of faith is taken to tran ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915964

4. Impact of BTI on Random Logic Circuit Critical Timing
Published: 10/31/2014
Authors: Kin P Cheung, Jiwu Lu, Guangfan Jiao, Jason P Campbell, Jason T Ryan
Abstract: Bias temperature instability (BTI) is known to be a serious reliability issue for state-of-the-art Silicon MOSFET technology [1-6]. It is well-known that in addition to a ,permanentŠ degradation, there is a large recoverable degradation component [7] ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=917272

5. Accurate Fast Capacitance Measurements for Reliable Device Characterization
Published: 7/1/2014
Authors: Pragya Rasmi Shrestha, Kin P Cheung, Jason P Campbell, Jason T Ryan, Helmut Baumgart
Abstract: As device dimensions continue to scale, transient phenomena are becoming increasingly more important to understand for both performance and reliability considerations. Recently, fast capacitances versus voltage (CV) measurements have been gaining at ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915216

6. Circuit Speed Timing Jitter Increase in Random Logic Operation after NBTI Stress
Published: 6/1/2014
Authors: Guangfan Jiao, Jiwu Lu, Jason P Campbell, Jason T Ryan, Kin P Cheung, Chadwin D. Young, Gennadi Bersuker
Abstract: Recently, much effort has been spent trying to relate NBTI observations to real circuit impacts. While many of these efforts rely on circuit simulation to bridge this gap, an experimental approach is, of course, preferred. In this study we provide th ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915921

7. Constant Shape Factor Frequency Modulated Charge Pumping (FMCP)
Published: 3/3/2014
Authors: Jason T Ryan, Jason P Campbell, Jibin Zou, Kin P Cheung, Richard Southwick, Anthony Oates, Rue Huang
Abstract: Abstract, We examine the seemingly frequency-dependent gate leakage current component of frequency-modulated charge pumping and show it to be a measurement artifact. If untreated, this results in erroneous defect density extractions. We present a co ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915082

8. Fast-Capacitance for Advanced Device Characterization
Published: 3/3/2014
Authors: Pragya Rasmi Shrestha, Kin P Cheung, Jason T Ryan, Jason P Campbell, Helmut Baumgart
Abstract: Fast-CV measurements are frequently being used to study transient phenomena associated with advanced devices. In this study, we show that many artifacts plague this measurement and then provide a proper method to legitimize fast-CV measurements as tr ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=914753

9. Reliability Monitoring For Highly Leaky Devices
Published: 5/31/2013
Authors: Jason T Ryan, Jason P Campbell, Kin P Cheung, John S Suehle, Richard Southwick, Anthony Oates
Abstract: We demonstrate a new charge pumping (CP) methodology, frequency modulated CP (FMCP), that robustly treats metrology challenges associated with high gate leakage current. By moving to an AC coupled measurement, we are able to easily resolve small CP s ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913575

10. Frequency-Modulated Charge Pumping: Defect Measurements with High Gate Leakage
Published: 2/28/2013
Authors: Jason T Ryan, Richard G. Southwick, Jason P Campbell, Kin P Cheung, John S Suehle, Anthony Oates
Abstract: Charge pumping is one of the most relied upon techniques used to quantify interface defects in metal-oxide-semiconductor devices. However, conventional charge pumping is easily hindered by excessive gate leakage currents which render the technique un ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913574



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