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Author: joseph kopanski
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Displaying records 81 to 90 of 107 records.
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81. Scanning Capacitance Microscopy Measurement of 2-D Dopant Profiles across Junctions
Published: 12/31/1997
Authors: Joseph J Kopanski, Jay F. Marchiando, David W. Berning
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=3316

82. Scanning Capacitance Microscopy Measurements and Modeling for Dopant Profiling of Silicon
Published: 12/31/1996
Authors: Joseph J Kopanski, Jay F. Marchiando, J R. Lowney
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=13654

83. Scanning Capacitance Microscopy Measurements and Modeling: Progress Towards Dopant Profiling of Silicon
Published: 12/31/1995
Authors: Joseph J Kopanski, Jay F. Marchiando, J R. Lowney
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=9950

84. Scanning Capacitance Microscopy Measurements and Modeling: Progress Towards Dopant Profiling of Silicon
Published: 2/1/1996
Authors: Joseph J Kopanski, Jay F. Marchiando, J R. Lowney
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=28806

85. Scanning Capacitance Microscopy for Electrical Characterization of Semiconductors and Dielectrics
Published: 2/1/2007
Author: Joseph J Kopanski
Abstract: A Scanning Capacitance Microscope (SCM) combines an Atomic Force Microscope (AFM) with a 1-GHz tuned-LCR circuit to measure the capacitance between a conducting tip and sample. When applied to a semiconductor sample, an ac voltage at around 10 kHz is ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31968

86. Scanning Capacitance Microscopy for Measuring Device Carrier Profiles beyond the 100 nm Generation
Published: 12/31/2000
Authors: Joseph J Kopanski, Jay F. Marchiando, Brian G. Rennex
Abstract: The Scanning Capacitance Microscope (SCM) is a leading candidate for a metrology capable of measuring the two-dimensional (2-D) carrier profiles of cross-section silicon transistors. The International Technology Roadmap for Semiconductors (ITRS) ide ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=5920

87. Scanning Capacitance Microscopy for Profiling PN-Junctions in Silicon
Series: NIST Interagency/Internal Report (NISTIR)
Published: 12/1/1994
Authors: Joseph J Kopanski, Jay F. Marchiando, J R. Lowney, David G Seiler
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=27180

88. Scanning Kelvin Force Microscopy For Characterizing Nanostructures in Atmosphere
Published: 9/30/2007
Authors: Joseph J Kopanski, Muhammad Yaqub Afridi, Stoyan Jeliazkov, Weirong Jiang, Thomas R Walker
Abstract: The Electrostatic Force Microscope (EFM) and its variants are of interest for the measurement of potential distributions within nanostructures, and for work function measurements of gate metals for next generation CMOS. In phase mode, the EFM measure ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32648

89. Scanning Probe Microscopes for Subsurface Imaging
Published: 5/11/2014
Authors: Joseph J Kopanski, Lin You, Jungjoon Ahn, Emily Hitz, Yaw S Obeng
Abstract: Scanning probe microscopes (SPMs) have some ability to image sub-surface structures. This paper describes the theoretical and practical basis for imaging metal lines buried beneath insulating layers and for imaging insulating regions or voids within ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915483

90. Scanning Probe Microscopes for the Electrical Characterization of Semiconductors
Published: 3/4/2003
Author: Joseph J Kopanski
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31459



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