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Author: joseph kopanski
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Displaying records 81 to 90 of 110 records.
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81. Scanned Probe Techniques for the Electrical Characterization of Semiconductor Devices
Published: 7/1/1995
Authors: John A Dagata, Joseph J Kopanski
Abstract: The spatial resolution, sensitivity, and accuracy required for electrical characterization of device structures in the semiconductor industry suggest that scanned probe microscopy (SPM) tools may offer an alternative to existing measurement technique ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820733

82. Scanning Capacitance Microscopy Applied to 2D Dopant Profiling of Semiconductors
Published: 12/31/1997
Authors: Joseph J Kopanski, Jay F. Marchiando, J R. Lowney
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=8618

83. Scanning Capacitance Microscopy Measurement of 2-D Dopant Profiles Across Junctions
Published: 1/1/1998
Authors: Joseph J Kopanski, Jay F. Marchiando, David W. Berning, R. Alvis, H. E. Smith
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=26626

84. Scanning Capacitance Microscopy Measurement of 2-D Dopant Profiles across Junctions
Published: 12/31/1997
Authors: Joseph J Kopanski, Jay F. Marchiando, David W. Berning
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=3316

85. Scanning Capacitance Microscopy Measurements and Modeling for Dopant Profiling of Silicon
Published: 12/31/1996
Authors: Joseph J Kopanski, Jay F. Marchiando, J R. Lowney
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=13654

86. Scanning Capacitance Microscopy Measurements and Modeling: Progress Towards Dopant Profiling of Silicon
Published: 12/31/1995
Authors: Joseph J Kopanski, Jay F. Marchiando, J R. Lowney
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=9950

87. Scanning Capacitance Microscopy Measurements and Modeling: Progress Towards Dopant Profiling of Silicon
Published: 2/1/1996
Authors: Joseph J Kopanski, Jay F. Marchiando, J R. Lowney
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=28806

88. Scanning Capacitance Microscopy for Electrical Characterization of Semiconductors and Dielectrics
Published: 2/1/2007
Author: Joseph J Kopanski
Abstract: A Scanning Capacitance Microscope (SCM) combines an Atomic Force Microscope (AFM) with a 1-GHz tuned-LCR circuit to measure the capacitance between a conducting tip and sample. When applied to a semiconductor sample, an ac voltage at around 10 kHz is ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31968

89. Scanning Capacitance Microscopy for Measuring Device Carrier Profiles beyond the 100 nm Generation
Published: 12/31/2000
Authors: Joseph J Kopanski, Jay F. Marchiando, Brian G. Rennex
Abstract: The Scanning Capacitance Microscope (SCM) is a leading candidate for a metrology capable of measuring the two-dimensional (2-D) carrier profiles of cross-section silicon transistors. The International Technology Roadmap for Semiconductors (ITRS) ide ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=5920

90. Scanning Capacitance Microscopy for Profiling PN-Junctions in Silicon
Series: NIST Interagency/Internal Report (NISTIR)
Published: 12/1/1994
Authors: Joseph J Kopanski, Jay F. Marchiando, J R. Lowney, David G Seiler
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=27180



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