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You searched on: Author: john villarrubia

Displaying records 51 to 60 of 92 records.
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51. Nanoindentation of Polymers: An Overview
Published: 1/1/2001
Authors: Mark R VanLandingham, John S Villarrubia, William F Guthrie, G Meyers
Abstract: In this paper, the application of instrumented indentation devices to the measurement of the elastic modulus of polymeric materials is reviewed. This review includes a summary of traditional analyses of load-penetration data and a discussion of assoc ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=821591

52. Linewidth Intercomparison on a Polysilicon Sample
Published: 11/1/2000
Authors: John S Villarrubia, Andras Vladar, Michael T Postek, Ronald G Dixson
Abstract: Not available.
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=821574

53. Advancing Nanoscale Indentation Measurements Toward Quantitative Characterization of Polymer Properties
Published: 8/1/2000
Authors: Mark R VanLandingham, John S Villarrubia, G F Meyers, M D Dineen
Abstract: The ultimate objective of instrumented indentation testing is to obtain absolute measurements of material properties and behavior. To achieve this goal, accurate knowledge of the shape of the indenter tip is required. For indentation measurements i ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=860249

54. Nanoindentation of Polymers: An Overview
Published: 8/1/2000
Authors: Mark R VanLandingham, John S Villarrubia, William F Guthrie, G F Meyers
Abstract: Indentation measurements made with atomic force microscopy (AFM) probes are relative measurements, largely due to the lack of information regarding the tip shape of the AFM probes. Also, current tip shape calibration procedures used in depth-sensing ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=860259

55. Is a Production Level Scanning Electron Microscope Linewidth Standard Possible?
Published: 6/1/2000
Authors: Michael T Postek, Andras Vladar, John S Villarrubia
Abstract: Metrology will remain a pricipal enabler for the development and manufacture of future generations of semiconductor devices. With the potential of 130 nm and 100 nm linewidths and high aspect ratio structures, the scanning electron microscope (SEM) r ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=823127

56. Is a Production-Level Scanning Electron Microscope Linewidth Standard Possible?
Published: 6/1/2000
Authors: Michael T Postek, Andras Vladar, John S Villarrubia
Abstract: Metrology will remain a principal enabler for the development and manufacture of future generations of semiconductor devices. With the potential of 130 and l00-nanometer linewidths and high aspect ratio structures, the scanning electron microscope (S ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820974

57. Linewidth Measurement Intercomparison on a BESOI Sample
Published: 6/1/2000
Authors: John S Villarrubia, Andras Vladar, J R. Lowney, Michael T Postek, Richard A Allen, Michael W. Cresswell, Rathindra Ghoshtagore
Abstract: The effect of the instrument on the measurement must be known in order to generate an accurate linewidth measurement. Although instrument models exist for a variety of techniques, how does one assess the accuracy of these models? Intercomparisons bet ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820989

58. Recent Progress in Nanoscale Indentation of Polymers Using the AFM
Published: 6/1/2000
Authors: Mark R VanLandingham, John S Villarrubia, G F Meyers
Abstract: Regardless of the type of test, reliable indentation measurements require knowledge of the shape of the indenter tip. For indentation measurements involving sub-micrometer scale contacts, accurate knowledge of the tip shape can be difficult to achie ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=860274

59. Applications of SEM Monte Carlo Modeling to Geometry Determination in Single-Crystal Silicon Test Patterns
Published: 5/1/2000
Authors: John S Villarrubia, Andras Vladar, J R. Lowney, Samuel N Jones, Michael T Postek
Abstract: Width measurements pose a particularly problematic calibration problem. The measurement entails determining the distance between inherently dissimilar edges. Even in the simplest imaginable case, an ideal line of rectangular cross section, the left a ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820987

60. Molecular Measuring Machine Design and Measurements
Published: 5/1/2000
Authors: John A Kramar, Jay Shi Jun, William B. Penzes, Fredric Scire, E Clayton Teague, John S Villarrubia
Abstract: We at the National Institute of Standards and Technology are building a metrology instrument called the Molecular Measuring Machine (M3) with the goal of performing nanometer-accuracy, two-dimensional, point-to-point measurements over a 50 mm by 50 m ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=821763



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