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Author: benjamin tsai

Displaying records 11 to 20 of 95 records.
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11. Emissivity Compensated Pyrometry for Specular Silicon Surfaces on the NIST RTP Test Bed
Published: 9/1/2004
Authors: Benjamin K Tsai, J Bodycomb, D P DeWitt, Kenneth Gruber Kreider, William Andrew Kimes
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=841857

12. Comparing the Transient Response of a Resistive-Type Sensor With a Thin Film Thermocouple During the Post-Exposure Bake Process
Published: 4/1/2004
Authors: Kenneth Gruber Kreider, D P DeWitt, J B Fowler, J E Proctor, William Andrew Kimes, Dean C Ripple, Benjamin K Tsai
Abstract: Recent studies on dynamic temperature profiling and lithographic performance modeling of the post-exposure bake (PEB) process have demonstrated that the rate of heating and cooling may have an important influence on resist lithographic response. Gen ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=830864

13. Comparing the Transient Response of a Resistive-Type Sensor with a Thin-Film Thermocouple During the Post-Exposure Bake Process, Data Analysis and Modeling for Process Control
Published: 1/1/2004
Authors: K G Kreider, D P DeWitt, J B Fowler, J E Proctor, W A. Kimes, D C Ripple, Benjamin K Tsai
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=104578

14. Emissivity Compensated Pyrometry for Specular Silicon Surfaces on the NIST RTP Test Bed
Published: 1/1/2004
Authors: Benjamin K Tsai, J Bodycomb, D P DeWitt, K G Kreider, W A. Kimes
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=104787

15. Emissivity Compensated Pyrometry for Specular Silicon Surfaces on the NIST RTP Test Bed
Published: 1/1/2004
Authors: J Bodycomb, D P DeWitt, W A. Kimes, K G Kreider, Benjamin K Tsai
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=104323

16. Heat-Flux Sensor Calibration
Series: Special Publication (NIST SP)
Published: 1/1/2004
Authors: Benjamin K Tsai, Charles E Gibson, M V Annageri, D P DeWitt, Robert D. Saunders
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=104786

17. In Situ Calibration of Lightpipe Radiometers for Rapid Thermal Processing between 300 {degree} C to 700 {degree} C
Published: 1/1/2004
Authors: W A. Kimes, K G Kreider, D C Ripple, Benjamin K Tsai
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=104572

18. Calibration of Radiation Thermometers in Rapid Thermal Processing Tools Using Si Wafers with Thin Film Thermocouples
Published: 10/1/2003
Authors: Kenneth Gruber Kreider, William Andrew Kimes, Christopher W Meyer, Dean C Ripple, Benjamin K Tsai, D H Chen, D P DeWitt
Abstract: Rapid thermal processing (RTP) tools are currently monitored and controlled with lightpipe radiation thermometers (LPRTs) which have been calibrated with thermocouple instrumented wafers. We have developed a thin-film thermocouple wafer that enables ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=830794

19. Characterization and Calibration of Lightpipe Radiation Thermometers for Use in Rapid Thermal Processing
Published: 9/1/2003
Authors: Benjamin K Tsai, D P DeWitt
Abstract: Lightpipe radiation thermometers (LPRTs) are the sensor of choice for temperature measurements in Rapid Thermal Processing (RTP) applications. At the National Institute of Standards and Technology (NIST), we have developed protocols for calibrating ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=841652

20. Effects of Lightpipe Proximity on Si Wafer Temperature in Rapid Thermal Processing Tools
Published: 9/1/2003
Authors: Kenneth Gruber Kreider, D H Chen, D P DeWitt, William Andrew Kimes, Benjamin K Tsai
Abstract: curate temperature measurements are critical in rapid thermal processing (RTP) of silicon wafers for thermal oxidation and dopant anneals. Many RTP tools use lightpipe radiation thermometers (LPRTs) to measure the wafer temperatures during processin ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=830853



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