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Author: john suehle

Displaying records 11 to 20 of 175 records.
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11. A new interface defect spectroscopy method
Published: 4/26/2011
Authors: Jason T Ryan, Liangchun Yu, Jae Han, Joseph J Kopanski, Kin P Cheung, Fei Zhang, Chen Wang, Jason P Campbell, John S Suehle, Vinny Tilak, Jody Fronheiser
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908427

12. A new interface defect spectroscopy method
Published: 4/13/2011
Authors: Jason T Ryan, Liangchun Yu, Jae Han, Joseph J Kopanski, Kin P Cheung, Jason P Campbell, Fei Zhang, Chen Wang, John S Suehle, Vinny Tilak, Jody Fronheiser
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908426

13. A New Interface Defect Spectroscopy Method
Published: 4/12/2011
Authors: Jason T Ryan, Liangchun Yu, Jae Han, Joseph J Kopanski, Kin P Cheung, Fei Zhang, C Wang, Jason P Campbell, John S Suehle, Vinayak Tilak, Jody Fronheiser
Abstract: A new interface defect spectroscopy method based on variable height charge pumping capable of observing the amphoteric nature of Si/SiO2 interface states in production quality sub-micron devices is demonstrated. It can help to resolve the long stand ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907880

14. A New Interface Defect Spectroscopy Method
Published: 4/11/2011
Authors: Jason T Ryan, Liangchun Yu, Jae Han, Joseph J Kopanski, Kin P Cheung, Fei Zhang, Chen Wang, Jason P Campbell, John S Suehle, Viniyak Tilak, Jody Fronheiser
Abstract: A new interface defect spectroscopy method based on variable height charge pumping capable of observing the amphoteric nature of Si/SiO2 interface states in production quality sub-micron devices is demonstrated. It can help to resolve the long stand ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907968

15. Geometric Magnetoresistance Mobility Extraction in Highly Scaled Transistors
Published: 1/3/2011
Authors: Jason P Campbell, Kin P Cheung, Liangchun Yu, John S Suehle, Kuang Sheng, A Oates
Abstract: Geometric magnetoresistance provides a promising solution to the difficult challenges associated with channel mobility extraction in nano-scale transistors. However, this technique requires significant experimental considerations which are uncommon i ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905955

16. Band Alignment of Metal-Oxide-Semiconductor Structure by Internal Photoemission Spectroscopy and Spectroscopic Ellipsometry
Published: 12/10/2010
Authors: Nhan V Nguyen, Oleg A Kirillov, John S Suehle
Abstract: In this paper, we will provide an overview of the internal photoemission (IPE) and the significance of this technique when combined with spectroscopic ellipsometry (SE) to investigate the interfacial electronic properties of heterostructures. In ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907189

17. The Role of High-Field Stress in the Negative Bias Temperature Instability
Published: 12/1/2010
Authors: Jason P Campbell, Kin P Cheung, John S Suehle, A Oates
Abstract: In this study, a fast drain current measurement methodology which supports the standard threshold voltage and transconductance extractions associated with the fast dynamic negative-bias temperature instability (NBTI) is presented. Using this methodol ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=902186

18. New Methods for the Direct Extraction of Mobility and Series Resistance from a Single Ultra-Scaled Device
Published: 6/15/2010
Authors: Jason P Campbell, Kin P Cheung, Liangchun Yu, John S Suehle, Kuang Sheng, A Oates
Abstract: The engineering of channel mobility (μ) and series resistance (RSD) in advanced CMOS technologies are both extremely challenging and of paramount importance. Together, they determine the key metric of performance ON current. The reported scali ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907097

19. New Methods for the Direct Extraction of Mobility and Series Resistance from a Single Ultra-Scaled Device
Published: 6/1/2010
Authors: Jason P Campbell, Kin P Cheung, Liangchun Yu, John S Suehle, Kuang Sheng, A Oates
Abstract: A reliable extraction methodology for both quantities directly from a single ultra-scaled device is extremely important and urgently needed. In this work, we demonstrate (1) a wafer level geometric magnetoresistance methodology for mobility extractio ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905953

20. Band Alignment of Metal-Oxide-Semiconductor Structure by Internal Photoemission Spectroscopy and Spectroscopic Ellipsometry
Published: 5/28/2010
Authors: Nhan V Nguyen, Oleg A Kirillov, John S Suehle
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907105