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You searched on: Author: john suehle

Displaying records 11 to 20 of 180 records.
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11. When Does a Circuit Really Fail?
Published: 12/15/2011
Authors: Jason T Ryan, Lan Wei, Jason P Campbell, Richard G. Southwick, Kin P Cheung, Tony Oates, Phillip Wong, John S Suehle
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911206

12. Circuit-Aware Device Reliability Criteria Methodology
Published: 9/12/2011
Authors: Jason T Ryan, Lan Wei, Jason P Campbell, Richard G. Southwick, Kin P Cheung, Anthony Oates, John S Suehle, Phillip Wong
Abstract: Meeting reliability requirements is an increasingly more difficult challenge with each generation of CMOS technology. The disconnection between conventional one-size-fits-all reliability specifications and the wide range of circuit applications might ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908765

13. A Simple Series Resistance Extraction Methodology for Advanced CMOS Devices
Published: 8/1/2011
Authors: Jason P Campbell, Kin P Cheung, John S Suehle, A Oates
Abstract: Series resistance has become a serious obstacle inhibiting the performance of advanced CMOS devices. However, series resistance quantification in these same advanced CMOS devices is becoming exceedingly difficult. In this study, we demonstrate a very ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905954

14. Spectroscopic charge pumping investigation of the amphoteric nature of Si/SiO2 interface states
Published: 6/6/2011
Authors: Jason T Ryan, Liangchun (Liangchun) Yu, Jae Han, Joseph J Kopanski, Kin P Cheung, Fei Zhang, Chen Wang, Jason P Campbell, John S Suehle
Abstract: The amphoteric nature of Si/SiO2 interface states in submicron sized metal-oxide-silicon-field-effect-transistors is observed using an enhanced spectroscopic charge pumping method. The method‰s simplicity and high sensitivity makes it a powerful too ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908429

15. Fabrication, Characterization and Simulation of High Performance Si Nanowire-based Non-Volatile Memory Cells
Published: 5/16/2011
Authors: Xiaoxiao Zhu, Qiliang Li, D. E Ioannou, Diefeng Gu, John E Bonevich, Helmut Baumgart, John S Suehle, Curt A Richter
Abstract: We report the fabrication, characterization and simulation of Si nanowire SONOS-like non-volatile memory with HfO2 charge trapping layers of varying thickness. The memory cells, which are fabricated by self-aligning in-situ grown Si nanowires, exhibi ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907251

16. A new interface defect spectroscopy method
Published: 4/26/2011
Authors: Jason T Ryan, Liangchun (Liangchun) Yu, Jae Han, Joseph J Kopanski, Kin P Cheung, Fei Zhang, Chen Wang, Jason P Campbell, John S Suehle, Vinny Tilak, Jody Fronheiser
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908427

17. A new interface defect spectroscopy method
Published: 4/13/2011
Authors: Jason T Ryan, Liangchun (Liangchun) Yu, Jae Han, Joseph J Kopanski, Kin P Cheung, Jason P Campbell, Fei Zhang, Chen Wang, John S Suehle, Vinny Tilak, Jody Fronheiser
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908426

18. A New Interface Defect Spectroscopy Method
Published: 4/12/2011
Authors: Jason T Ryan, Liangchun (Liangchun) Yu, Jae Han, Joseph J Kopanski, Kin P Cheung, Fei Zhang, C Wang, Jason P Campbell, John S Suehle, Vinayak Tilak, Jody Fronheiser
Abstract: A new interface defect spectroscopy method based on variable height charge pumping capable of observing the amphoteric nature of Si/SiO2 interface states in production quality sub-micron devices is demonstrated. It can help to resolve the long stand ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907880

19. A New Interface Defect Spectroscopy Method
Published: 4/11/2011
Authors: Jason T Ryan, Liangchun (Liangchun) Yu, Jae Han, Joseph J Kopanski, Kin P Cheung, Fei Zhang, Chen Wang, Jason P Campbell, John S Suehle, Viniyak Tilak, Jody Fronheiser
Abstract: A new interface defect spectroscopy method based on variable height charge pumping capable of observing the amphoteric nature of Si/SiO2 interface states in production quality sub-micron devices is demonstrated. It can help to resolve the long stand ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907968

20. Geometric Magnetoresistance Mobility Extraction in Highly Scaled Transistors
Published: 1/3/2011
Authors: Jason P Campbell, Kin P Cheung, Liangchun (Liangchun) Yu, John S Suehle, Kuang Sheng, A Oates
Abstract: Geometric magnetoresistance provides a promising solution to the difficult challenges associated with channel mobility extraction in nano-scale transistors. However, this technique requires significant experimental considerations which are uncommon i ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905955



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