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Author: john suehle

Displaying records 11 to 20 of 179 records.
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11. Circuit-Aware Device Reliability Criteria Methodology
Published: 9/12/2011
Authors: Jason T Ryan, Lan Wei, Jason P Campbell, Richard G. Southwick, Kin P Cheung, Anthony Oates, John S Suehle, Phillip Wong
Abstract: Meeting reliability requirements is an increasingly more difficult challenge with each generation of CMOS technology. The disconnection between conventional one-size-fits-all reliability specifications and the wide range of circuit applications might ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908765

12. A Simple Series Resistance Extraction Methodology for Advanced CMOS Devices
Published: 8/1/2011
Authors: Jason P Campbell, Kin P Cheung, John S Suehle, A Oates
Abstract: Series resistance has become a serious obstacle inhibiting the performance of advanced CMOS devices. However, series resistance quantification in these same advanced CMOS devices is becoming exceedingly difficult. In this study, we demonstrate a very ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905954

13. Spectroscopic charge pumping investigation of the amphoteric nature of Si/SiO2 interface states
Published: 6/6/2011
Authors: Jason T Ryan, Liangchun Yu, Jae Han, Joseph J Kopanski, Kin P Cheung, Fei Zhang, Chen Wang, Jason P Campbell, John S Suehle
Abstract: The amphoteric nature of Si/SiO2 interface states in submicron sized metal-oxide-silicon-field-effect-transistors is observed using an enhanced spectroscopic charge pumping method. The method‰s simplicity and high sensitivity makes it a powerful too ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908429

14. Fabrication, Characterization and Simulation of High Performance Si Nanowire-based Non-Volatile Memory Cells
Published: 5/16/2011
Authors: Xiaoxiao Zhu, Qiliang Li, D. E Ioannou, Diefeng Gu, John E Bonevich, Helmut Baumgart, John S Suehle, Curt A Richter
Abstract: We report the fabrication, characterization and simulation of Si nanowire SONOS-like non-volatile memory with HfO2 charge trapping layers of varying thickness. The memory cells, which are fabricated by self-aligning in-situ grown Si nanowires, exhibi ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907251

15. A new interface defect spectroscopy method
Published: 4/26/2011
Authors: Jason T Ryan, Liangchun Yu, Jae Han, Joseph J Kopanski, Kin P Cheung, Fei Zhang, Chen Wang, Jason P Campbell, John S Suehle, Vinny Tilak, Jody Fronheiser
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908427

16. A new interface defect spectroscopy method
Published: 4/13/2011
Authors: Jason T Ryan, Liangchun Yu, Jae Han, Joseph J Kopanski, Kin P Cheung, Jason P Campbell, Fei Zhang, Chen Wang, John S Suehle, Vinny Tilak, Jody Fronheiser
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908426

17. A New Interface Defect Spectroscopy Method
Published: 4/12/2011
Authors: Jason T Ryan, Liangchun Yu, Jae Han, Joseph J Kopanski, Kin P Cheung, Fei Zhang, C Wang, Jason P Campbell, John S Suehle, Vinayak Tilak, Jody Fronheiser
Abstract: A new interface defect spectroscopy method based on variable height charge pumping capable of observing the amphoteric nature of Si/SiO2 interface states in production quality sub-micron devices is demonstrated. It can help to resolve the long stand ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907880

18. A New Interface Defect Spectroscopy Method
Published: 4/11/2011
Authors: Jason T Ryan, Liangchun Yu, Jae Han, Joseph J Kopanski, Kin P Cheung, Fei Zhang, Chen Wang, Jason P Campbell, John S Suehle, Viniyak Tilak, Jody Fronheiser
Abstract: A new interface defect spectroscopy method based on variable height charge pumping capable of observing the amphoteric nature of Si/SiO2 interface states in production quality sub-micron devices is demonstrated. It can help to resolve the long stand ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907968

19. Geometric Magnetoresistance Mobility Extraction in Highly Scaled Transistors
Published: 1/3/2011
Authors: Jason P Campbell, Kin P Cheung, Liangchun Yu, John S Suehle, Kuang Sheng, A Oates
Abstract: Geometric magnetoresistance provides a promising solution to the difficult challenges associated with channel mobility extraction in nano-scale transistors. However, this technique requires significant experimental considerations which are uncommon i ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905955

20. Band Alignment of Metal-Oxide-Semiconductor Structure by Internal Photoemission Spectroscopy and Spectroscopic Ellipsometry
Published: 12/10/2010
Authors: Nhan V Nguyen, Oleg A Kirillov, John S Suehle
Abstract: In this paper, we will provide an overview of the internal photoemission (IPE) and the significance of this technique when combined with spectroscopic ellipsometry (SE) to investigate the interfacial electronic properties of heterostructures. In ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907189



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