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You searched on: Author: jason ryan

Displaying records 21 to 28.
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21. Circuit-Aware Device Reliability Criteria Methodology
Published: 9/12/2011
Authors: Jason T Ryan, Lan Wei, Jason P Campbell, Richard G. Southwick, Kin P Cheung, Anthony Oates, John S Suehle, Phillip Wong
Abstract: Meeting reliability requirements is an increasingly more difficult challenge with each generation of CMOS technology. The disconnection between conventional one-size-fits-all reliability specifications and the wide range of circuit applications might ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908765

22. Spectroscopic charge pumping investigation of the amphoteric nature of Si/SiO2 interface states
Published: 6/6/2011
Authors: Jason T Ryan, Liangchun Yu, Jae Han, Joseph J Kopanski, Kin P Cheung, Fei Zhang, Chen Wang, Jason P Campbell, John S Suehle
Abstract: The amphoteric nature of Si/SiO2 interface states in submicron sized metal-oxide-silicon-field-effect-transistors is observed using an enhanced spectroscopic charge pumping method. The method‰s simplicity and high sensitivity makes it a powerful too ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908429

23. Electrically detected magnetic resonance in dielectric semiconductor systems of current interest
Published: 5/4/2011
Authors: Patrick Lenahan, Corey Cochrane, Jason P Campbell, Jason T Ryan
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908428

24. Electrically Detected Magnetic Resonance in Dielectric Semiconductor Systems of Current Interest
Published: 5/1/2011
Authors: P. M. Lenahan, Corey Cochrane, Jason P Campbell, Jason T Ryan
Abstract: Several electrically detected magnetic resonance techniques provide insight into the physical and chemical structure of technologically significant deep level defects in solid state electronics. Spin dependent recombination is sensitive to deep level ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=909230

25. A new interface defect spectroscopy method
Published: 4/26/2011
Authors: Jason T Ryan, Liangchun Yu, Jae Han, Joseph J Kopanski, Kin P Cheung, Fei Zhang, Chen Wang, Jason P Campbell, John S Suehle, Vinny Tilak, Jody Fronheiser
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908427

26. A new interface defect spectroscopy method
Published: 4/13/2011
Authors: Jason T Ryan, Liangchun Yu, Jae Han, Joseph J Kopanski, Kin P Cheung, Jason P Campbell, Fei Zhang, Chen Wang, John S Suehle, Vinny Tilak, Jody Fronheiser
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908426

27. A New Interface Defect Spectroscopy Method
Published: 4/12/2011
Authors: Jason T Ryan, Liangchun Yu, Jae Han, Joseph J Kopanski, Kin P Cheung, Fei Zhang, C Wang, Jason P Campbell, John S Suehle, Vinayak Tilak, Jody Fronheiser
Abstract: A new interface defect spectroscopy method based on variable height charge pumping capable of observing the amphoteric nature of Si/SiO2 interface states in production quality sub-micron devices is demonstrated. It can help to resolve the long stand ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907880

28. A New Interface Defect Spectroscopy Method
Published: 4/11/2011
Authors: Jason T Ryan, Liangchun Yu, Jae Han, Joseph J Kopanski, Kin P Cheung, Fei Zhang, Chen Wang, Jason P Campbell, John S Suehle, Viniyak Tilak, Jody Fronheiser
Abstract: A new interface defect spectroscopy method based on variable height charge pumping capable of observing the amphoteric nature of Si/SiO2 interface states in production quality sub-micron devices is demonstrated. It can help to resolve the long stand ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907968



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