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You searched on: Author: jason ryan

Displaying records 11 to 20 of 32 records.
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11. Fast-Capacitance for Advanced Device Characterization
Published: 3/3/2014
Authors: Pragya Rasmi Shrestha, Kin P Cheung, Jason T Ryan, Jason P Campbell, Helmut Baumgart
Abstract: Fast-CV measurements are frequently being used to study transient phenomena associated with advanced devices. In this study, we show that many artifacts plague this measurement and then provide a proper method to legitimize fast-CV measurements as tr ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=914753

12. Reliability Monitoring For Highly Leaky Devices
Published: 5/31/2013
Authors: Jason T Ryan, Jason P Campbell, Kin P Cheung, John S Suehle, Richard Southwick, Anthony Oates
Abstract: We demonstrate a new charge pumping (CP) methodology, frequency modulated CP (FMCP), that robustly treats metrology challenges associated with high gate leakage current. By moving to an AC coupled measurement, we are able to easily resolve small CP s ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913575

13. Frequency-Modulated Charge Pumping: Defect Measurements with High Gate Leakage
Published: 2/28/2013
Authors: Jason T Ryan, Richard G. Southwick, Jason P Campbell, Kin P Cheung, John S Suehle, Anthony Oates
Abstract: Charge pumping is one of the most relied upon techniques used to quantify interface defects in metal-oxide-semiconductor devices. However, conventional charge pumping is easily hindered by excessive gate leakage currents which render the technique un ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913574

14. Frequency Dependent Charge Pumping -- A Defect Depth Profiling Tool?
Published: 1/31/2013
Authors: Jason T Ryan, Richard G. Southwick, Jason P Campbell, Kin P Cheung, John S Suehle
Abstract: We investigate the validity of using frequency-dependent charge pumping (FD-CP) to determine bulk defect depth distributions. Using simple physical arguments we conclude that: (1) the effective tunneling length to a bulk defect can be very different ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913573

15. SERIES RESISTANCE: A MONITOR FOR HOT CARRIER STRESS
Published: 1/31/2013
Authors: Jason P Campbell, Serghei Drozdov, Kin P Cheung, Richard G. Southwick, Jason T Ryan, John S Suehle, Anthony Oates
Abstract: In this work, we examine a series resistance extraction technique which yields accurate values from single nano-scale devices. The series resistance values, derived from this extraction technique, are shown to be sensitive to hot carrier degradation ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913576

16. Observation of Interface/Near Interface Defects in 4H SiC MOSFETs With a New Electrically Detected Magnetic Resonance Technique
Published: 1/1/2013
Authors: Jason T Ryan, Brad Bittel, Pat Lenahan, Jody Fronheiser, Aivars Lelis
Abstract: We study 4H SiC MOSFETs with a new electrically detected magnetic resonance technique (EDMR) we call spin dependent charge pumping (SDCP). Our SDCP results demonstrate a tremendous improvement in sensitivity over other EDMR techniques. Addition ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912340

17. On the Contribution of Bulk Defects on Charge Pumping Current
Published: 10/1/2012
Authors: Jason T Ryan, Richard G. Southwick, Jason P Campbell, Kin P Cheung, John S Suehle
Abstract: Frequency dependent charge pumping (FD-CP) has emerged as a popular technique for studying the spatial and energetic distribution of defect centers in advanced high-k gate stacks. However, conflicting interpretations of the charge pumping frequency - ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911823

18. Physical Model for Random Telegraph Noise Amplitudes and Implications
Published: 6/12/2012
Authors: Richard G. Southwick, Kin P Cheung, Jason P Campbell, Serghei Drozdov, Jason T Ryan, John S Suehle, Anthony Oates
Abstract: Random Telegraph Noise (RTN) has been shown to surpass random dopant fluctuations as a cause for decananometer device variability, through the measurement of a large number of ultra-scaled devices [1]. The most worrisome aspect of RTN is the tail of ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911514

19. Channel Length-Dependent Series Resistance?
Published: 6/10/2012
Authors: Jason P Campbell, Kin P Cheung, Serghei Drozdov, Richard G. Southwick, Jason T Ryan, Tony Oates, John S Suehle
Abstract: A recently developed series resistance (RSD) extraction procedure from a single nanoscale device is shown to be highly robust. Despite these virtues, the technique unexpectedly results in a channel length-dependent RSD which is observed across a wide ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911515

20. Spectroscopic Charge Pumping in the Presence of High Densities of Bulk Dielectric Traps
Published: 5/31/2012
Authors: Jason T Ryan, Richard G. Southwick, Jason P Campbell, Kin P Cheung, Chadwin Young
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911208



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