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Author: curt richter

Displaying records 121 to 130 of 166 records.
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121. Influence of a Water Rinse on the Structure and Properties of Poly(3,4-ethylene dioxythiophene):Poly(styrene sulfonate) Films
Published: 1/1/2005
Authors: Dean M DeLongchamp, B D. Vogt, C M. Brooks, K Kano, Jan Obrzut, Curt A Richter, Oleg A Kirillov, Eric K Lin
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=853982

122. High Inversion Current in Silicon Nanowire Field Effect Transistors
Published: 11/30/2004
Authors: Sang-Mo Koo, Jin-Ping Han, Eric M. Vogel, Curt A Richter, J. Vahakangas, Neil M Zimmerman, Akira Fujiwara
Abstract: Silicon nanowire (SiNW) field effect transistors (FETs) with channel widths down to 20 nm have been fabricated by a conventional 'top-down?approach using electron-beam lithography. The SiNW device shows higher inversion channel current density than t ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31760

123. Comparison of Si-O-C interfacial bonding of alcohols and aldehydes on Si(111) formed from dilute solution with ultraviolet irradiation
Published: 10/8/2004
Authors: Christina Ann Hacker, Kelly A Anderson, Lee J Richter, Curt A Richter
Abstract: Aliphatic alcohols and aldehydes were reacted with the Si(111)-H surface to form Si-O-C interfacial bonds from dilute solution using ultraviolet light. The monolayers were characterized by using transmission infrared spectroscopy, spectroscopic ellip ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31678

124. Influence of Buffer Layer Thickness on Memory Effects of SrBi2Ta2O9 /SiN/Si Structures
Published: 8/23/2004
Authors: Jin-Ping Han, Sang-Mo Koo, Curt A Richter, Eric M. Vogel
Abstract: We deposited ~250 nm thick SrBi2Ta2O9 (SBT) thin films on silicon-nitride buffered Si (100) substrates to form metal-ferroelelctric-insulator-semiconductor (MFIS) structures and observed a significant influence of buffer layer thickness on the magnit ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31567

125. Structure and Chemical Characterization of Self-Assembled Mono-Fluoro-Substituted Oligo(phenylene-ethynlyene) Monolayers on Gold
Published: 6/22/2004
Authors: Christina Ann Hacker, James D Batteas, J C. Garno, Manuel Marquez, Curt A Richter, Lee J Richter, Roger D van Zee, Christopher D Zangmeister
Abstract: Monolayers of oligo(phenylene-ethynylene) (OPE) molecules have exhibited promise in molecular electronic test structures. This paper discusses films formed from novel molecules within this class, 2-fluoro-4-phenylethynyl-1-[(4-acetylthio)-phenylethyn ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31449

126. Molecular Devices Formed by Direct Monolayer Attachment to Silicon
Published: 6/17/2004
Authors: Curt A Richter, Christina Ann Hacker, Lee J Richter, Eric M. Vogel
Abstract: We present the results of studies of solution-based attachment of long-chain aliphatic molecules to hydrogen-terminated Si<111> surfaces formed to determine the electrical properties of hybrid silicon-molecular nanoelectronic devices. We have applied ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31575

127. Metrology Development for the Nanoelectronics Industry at the National Institute of Standards and Technology
Published: 3/7/2004
Authors: Joaquin (Jack) Martinez, John A. Dagata, Curt A Richter, Richard M Silver
Abstract: The National Institute of Standards and Technology has provided and continues to provide critical metrology development for the semiconductor manufacturing industry as it moves from the microelectronic era into the nanoelectronic era. This presentaio ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31539

128. Asymmetric Energy Distribution of Interface Traps in n- & p- MOSFETs with HfO2 Gate Dielectric on Ultra-thin SiON Buffer Layer
Published: 3/1/2004
Authors: Jin-Ping Han, Eric M. Vogel, Evgeni Gusev, C. D'Emic, Curt A Richter, Da-Wei Heh, John S Suehle
Abstract: The variable rise/fall-time charge pumping technique has been used to determine the energy distribution of interface trap density (Dit) in MOSFETs with HfO2 gate dielectric grown on ultra-thin (1-2 monolayer) SiON buffer layer on Si. Our results have ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31451

129. Comparative Thickness Measurements of SiO^d2^/Si Films for Thickness Less than 10 nm
Published: 1/1/2004
Authors: Terrence J Jach, Joseph A. Dura, Nhan V Nguyen, J R. Swider, G Cappello, Curt A Richter
Abstract: We report on a comparative measurement of SiO^d2^/Si dielectric film thickness (t < 10 nm) using grazing incidence x-ray photoelectron spectroscopy, neutron reflectometry, and spectroscopic ellipsometry. Samples with nominal thicknesses of 3 nm to ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=831275

130. Comparative Thickness Measurements of SiO^d2^/Si Films for Thicknesses Less than 10 nm
Published: 1/1/2004
Authors: Terrence J Jach, Joseph A. Dura, Nhan V Nguyen, J Swider, G Cappello, Curt A Richter
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31662



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