Take a sneak peek at the new NIST.gov and let us know what you think!
(Please note: some content may not be complete on the beta site.).

View the beta site
NIST logo

Publications Portal

You searched on: Author: curt richter

Displaying records 121 to 130 of 176 records.
Resort by: Date / Title


121. Enhanced Channel Modulation in Dual-Gated Silicon Nanowire Transistors
Published: 12/1/2005
Authors: Sang-Mo Koo, Qiliang Li, Monica D Edelstein, Curt A Richter, Eric M. Vogel
Abstract: We report an approach to engineer the local band structure of silicon nanowire (SiNW) field-effect transistors (FETs) by using a dual-gated structure. In this device structure, by changing the local bandgap profile of the channel, the top-gate can su ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32067

122. Electrical and Spectroscopic Characterization of Metal/Monolayer/Si Devices
Published: 11/24/2005
Authors: Curt A Richter, Christina Ann Hacker, Lee J Richter
Abstract: A simple technique for vibrational spectroscopy of metal/monolayer/silicon structures is applied to study the interaction of Au, Al, and Ti with alkane monolayers, either assembled onto thin oxides or directly attached to Si. The results are correlat ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31908

123. Influence of a Water Rinse on the Structure and Properties of poly(3,4-ethylene dioxythiophene):poly(styrene sulfonate) Films
Published: 11/22/2005
Authors: D M. DeLongehamp, B D. Vogt, C M. Brooks, K Kano, J Obrzut, Curt A Richter, Oleg A Kirillov, E K. Lin
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32493

124. Variations in Semiconducting Polymer Microstructure and Hole Mobility With Spin-Coating Speed
Published: 11/15/2005
Authors: Dean M DeLongchamp, Brandon M. Vogel, Youngsuk Jung, Curt A Richter, Oleg A Kirillov, Jan Obrzut, Daniel A Fischer, S Sambasivan, Marc Gurau, Lee J Richter, Eric K Lin
Abstract: Organic semiconductors permit low-cost processing methods such as spin-coating, dip coating, or ink-jet printing onto flexible substrates. However, the performance of these materials in devices is difficult to control and new processing methods can ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=852534

125. Variations in Semiconducting Polymer Microstructure and Hole Mobility with Spin-Coating Speed
Published: 11/15/2005
Authors: Dean M. DeLongchamp, B M. Vogel, Y Jung, M C. Gurau, Curt A Richter, Oleg A Kirillov, J Obrzut, Debra A. Fischer, Sharadha Sambasivan, Lee J Richter, E K. Lin
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32494

126. IR Spectroscopic Characterization of the Buried Metal Interface of Metal-Molecule-Silicon Vertical Diodes
Published: 9/28/2005
Authors: Christina Ann Hacker, Curt A Richter, Lee J Richter
Abstract: We have developed and utilized p-polarized backside reflection absorption infrared spectroscopy (pb-RAIRS) to examine dielectrics between silicon substrates and metallic overlayers. The technique has been used to investigate oxides, organic layers on ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31935

127. Silicon Nanowires As Enhancement-mode Schottky-barrier Field-effect Transistors
Published: 6/29/2005
Authors: Sang-Mo Koo, Monica D Edelstein, Qiliang Li, Curt A Richter, Eric M. Vogel
Abstract: Silicon nanowire field-effect transistors (SiNWFETs) have been fabricated with a highly simplified integration scheme to function as Schottky barrier transistors and excellent enhancement-mode characteristics with high on/off current ratio ~107 are d ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31883

128. Nanometer Gaps in Gold Wires Are Formed By Thermal Migration
Published: 6/7/2005
Authors: Ganesh K. Ramachandran, Monica D Edelstein, David L. Blackburn, John S Suehle, Eric M. Vogel, Curt A Richter
Abstract: The formation of gold wires separated by a few nanometers is reported. Such nanometer separated gaps are formed by ramping, at ambient conditions, a bias voltage across a thin gold wire until the wire breaks or fails. Externally heating the wire does ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31901

129. Electrical Characterization of Al/AlOx/Molecule/Ti/Al Devices?
Published: 3/11/2005
Authors: Curt A Richter, D R. Stewart, D A. Ohlberg, R. S. Williams
Abstract: We report experimental electrical characterization of Al/AlOx/Molecule/Ti/Al planar crossbar devices incorporating Langmuir-Blodgett organic monolayers of eicosanoic acid, fast-blue or chlorophyll-B. Current-voltage and capacitance-voltage measuremen ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31839

130. Reverse Short Channel Effects in High-k Gated nMOSFETs
Published: 2/28/2005
Authors: Jin-Ping Han, Sang-Mo Koo, Eric M. Vogel, Evgeni Gusev, C. D'Emic, Curt A Richter, John S Suehle
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32101



Search NIST-wide:


(Search abstract and keywords)


Last Name:
First Name:







Special Publications:

Looking for a NIST Special Publication (NIST SP Series)? Place the series number and dash in the report number field (Example: 800-) and begin your search.

  • SP 250-XX: Calibration Services
  • SP 260-XX: Standard Reference Materials
  • SP 300-XX: Precision Measurement and Calibration
  • SP 400-XX: Semiconductor Measurement Technology
  • SP 480-XX: Law Enforcement Technology
  • SP 500-XX: Computer Systems Technology
  • SP 700-XX: Industrial Measurement Series
  • SP 800-XX: Computer Security Series
  • SP 823-XX: Integrated Services Digital Network Series