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Author: babak nikoobakht
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1. A Scalable Platform for Integrating Horizontal Nanochannels with Known Registries to Microchannels
Published: 12/8/2008
Author: Babak Nikoobakht
Abstract: A new method for in-situ fabrication of nanochannels is developed which allows adjusting their average pore size to an unprecedented range of 5 nm to 20 nm. It is shown that nanochannels with different but controlled pore sizes are selectively fab ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=832292

2. Analysis of Copper incorporation in Zno Nanowires
Published: 1/12/2009
Authors: Susie Eustis, Douglas C Meier, M R. Beversluis, Babak Nikoobakht
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=901886

3. Controlling The Growth Direction of ZnO Nanowires (NWs) on c and a -Plane Sapphire
Published: 2/1/2004
Authors: Babak Nikoobakht, Albert Davydov, Stephan J Stranick
Abstract: The issue of controlling the growth direction of NWs is vital in nanotechnology applications and future optoelectronic devices. In an effort to address the above, we have begun studies aimed at selectively controlling the growth direction of horizont ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=831331

4. Controlling the Growth Direction of ZnO Nanowires on c-Plane Sapphire
Published: Date unknown
Authors: Babak Nikoobakht, Albert Davydov, Stephan J Stranick
Abstract: Well oriented vertical ZnO nanowires (NWs) are grown on c-plane sapphire via a vapor-phase transport process using an Au thin film as a catalyst. This new finding is novel and unexpected due to the fact that the lattice mismatch between the zinc oxi ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=853395

5. Growth Habits and Defects in ZnO Nanowires Grown on GaN/Sapphire Substrates
Published: 8/31/2005
Authors: Igor Levin, Albert Davydov, Babak Nikoobakht, Norman A Sanford, Pavel Mogilevsky
Abstract: Growth habits and defects in epitaxial ZnO nanowires grown from Au catalyst on (0001) GaN/sapphire substrate using Vapor-Liquid-Solid (VLS) technique were studied using electron microscopy and X-ray diffraction. The results revealed presence of both ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=850854

6. Growth Habits and Defects in ZnO Nanowires Grown on GaN/sapphire Substrates
Published: 9/5/2005
Authors: A V Davydov, Babak Nikoobakht, Norman A Sanford, Pavel Mogilevsky
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=854255

7. Growth habits and defects in ZnO nanowires grown on GaN/sapphire substrates
Published: 8/31/2005
Authors: Igor Levin, Albert Davydov, Babak Nikoobakht, Norman A Sanford, Pavel Mogilevsky
Abstract: Growth habits and defects in epitaxial ZnO nanowires grown from Au catalyst on (00.1) GaN/sapphire substrate using the vapor-liquid-solid {I}(VLS){/I} technique were studied using electron microscopy and x-ray diffraction. The results revealed presen ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32488

8. Growth of Planar Arrays of One-dimensional p-n Heterojunctions
Published: 9/15/2010
Authors: Babak Nikoobakht, Andrew A Herzing
Abstract: We report a general method for /in-situ/ formation and hierarchical assembly of nanowire-based semiconductor heterojunctions that are electrically addressable. Heterojunctions are formed by lateral epitaxial growth of nanowires/nanowalls on a semicon ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=904671

9. Growth of Vertical ZnO Nanowires on c-Plane Sapphire
Published: Date unknown
Authors: Babak Nikoobakht, Albert Davydov, Stephan J Stranick
Abstract: Well oriented vertical ZnO nanowires (NWs) were grown on c-plane sapphire via a vapor-phase transport process using an Au thin film as a catalyst. This new finding is novel and unexpected due to the fact that the lattice mismatch between the zinc oxi ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=831339

10. Horizontal Growth and In Situ Assembly of Oriented Zinc Oxide Nanowires
Published: 10/1/2004
Authors: Babak Nikoobakht, Chris A Michaels, Stephan J Stranick, Mark D Vaudin
Abstract: The positioning and directed assembly of semiconductor nanowires (NWs) is of considerable current interest for bottom-up approaches to the engineering of intricate structures from nanoscale building blocks. We report a horizontal growth mode for ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=831361



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