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Author: nhan nguyen
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1. Time-resolved surface infrared spectroscopy during atomic layer deposition of TiO2 using tetrakis(dimethylamido)titanium and water
Published: 4/23/2014
Authors: Brent A Sperling, John Hoang, William Andrew Kimes, James E Maslar, Kristen L Steffens, Nhan V Nguyen
Abstract: Atomic layer deposition of titanium dioxide using tetrakis(dimethylamido)titanium (TDMAT) and water vapor is studied by reflection-absorption infrared spectroscopy (RAIRS) with a time resolution of 120 ms. Decomposition of the adsorbed TDMAT is ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915032

2. Graphene as Transparent Electrode for Direct Observation of Hole Photoemission from Silicon to Oxide
Published: 3/27/2013
Authors: Rusen Yan, Qin Q. Zhang, Oleg A Kirillov, Wei Li, James Ian Basham, Alexander George Boosalis, Xuelei X. Liang, Debdeep Jena, Curt A Richter, Alan C. Seabaugh, David J Gundlach, Huili G. Xing, Nhan V Nguyen
Abstract: The outstanding electrical and optical properties of graphene make it an excellent alternative as a transparent electrode. Here we demonstrate the application of graphene as collector material in internal photoemission (IPE) spectroscopy; enabling th ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912851

3. Backcontact CdSe/CdTE Windowless Solar Cells
Published: 2/1/2013
Authors: Donguk Kim, Carlos M. Hangarter, Ratan Kumar Debnath, Jong Yoon Ha, Carlos R Beauchamp, Matthew David Widstrom, Jonathan E Guyer, Nhan V Nguyen, B. Y. Yoo, Daniel Josell
Abstract: This paper details the fabrication and properties of CdSe/CdTe thin film photovoltaic devices with a dual back contact geometry. Device fabrication involves cadmium selenide electrodeposition on one of two interdigitated electrodes on a pre-patterned ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912050

4. Band Offset Determination of Atomic-Layer-Deposited Al2O3 and HfO2 on InP by Internal Photoemission and Spectroscopic Ellipsometry
Published: 1/9/2013
Authors: Kun Xu, Oleg A Kirillov, David J Gundlach, Nhan V Nguyen, Pei D Ye, Min Xu, Lin Dong, Hong Sio
Abstract: Band offsets at the interfaces of n- and p-type InP ((100) and (111)A) and atomic-layer-deposited (ALD) Al2O3 were measured with internal photoemission and spectroscopic ellipsometry. Similarly, the band offsets at the interface of semi-insulatin ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911342

5. Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy
Published: 7/11/2012
Authors: Rusen Yan, Qin Q. Zhang, Wei Li, Irene G. Calizo, Tian T. Shen, Curt A Richter, Angela R Hight Walker, Xuelei X. Liang, David J Gundlach, Nhan V Nguyen, Huili Grace Xing, Alan Seabaugh
Abstract: We determined the band alignment of a graphene-oxide-silicon structure using internal photoemission spectroscopy. From the flatband voltage and Dirac voltage we infer a 4.3  10e11 cm-2 negative extrinsic charge present on the graphene surface. Als ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911396

6. Tunnel FET Heterojunction Band Alignment by Internal Photoemission Spectroscopy
Published: 3/6/2012
Authors: Qin Q. Zhang, Guangle Zhou, Huili G. Xing, Alan C. Seabaugh, Kun Xu, Sio Hong, Oleg A Kirillov, Curt A Richter, Nhan V Nguyen
Abstract: The electron energy band alignment of a metal-oxide-semiconductor tunnel field-effect transistor (TFET) heterojunction, W/Al2O3/InGaAs/InAs/InP is determined by internal photoemission spectroscopy. At the oxide flat-band condition, the barrier height ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=909643

7. Characterization and Resistive Switching Properties of Solution-Processed HfO2, HfSiO4, and ZrSiO4 Thin Films on Rigid and Flexible Substrates
Published: 12/7/2011
Authors: Joseph Leo Tedesco, Walter Zheng, Oleg A Kirillov, Sujitra Jeanie Pookpanratana, Hyuk-Jae Jang, Premsagar Purushotham Kavuri, Nhan V Nguyen, Curt A Richter
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910358

8. Investigation of SiO2/HfO2 stacks for flash memory applications
Published: 4/28/2011
Authors: Nhan V Nguyen, Bashwar Chakrabarti
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908443

9. Photoemission Threshold Spectroscopy: MOS Band alignments
Published: 4/7/2011
Author: Nhan V Nguyen
Abstract: In this talk I will 1) briefly review SED‰s history of the optical thin metrology project, 2) describe the principle of internal photoemission (IPE) and the applications to determine the band alignments of metal-oxide-semiconductor structures, an ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908441

10. Band Alignment of Metal-Oxide-Semiconductor Structure by Internal Photoemission Spectroscopy and Spectroscopic Ellipsometry
Published: 12/10/2010
Authors: Nhan V Nguyen, Oleg A Kirillov, John S Suehle
Abstract: In this paper, we will provide an overview of the internal photoemission (IPE) and the significance of this technique when combined with spectroscopic ellipsometry (SE) to investigate the interfacial electronic properties of heterostructures. In ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907189



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