Publications Portal

You searched on:
Author: shannon hill

Displaying records 11 to 15.
Resort by: Date / Title

11. Nanotechnology with Atom Optics
Published: 11/1/2004
Authors: Jabez J McClelland, Shannon Bradley Hill, M Pichler, Robert Celotta
Abstract: A brief review of atom optics is presented, with emphasis on how it can be applied in the field of nanotechnology. Two specific examples are discussed: laser-focused atomic deposition and deterministic production of single atoms. Results are summar ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=620565

12. A Fast, Deterministic Source of Single Cr Atoms
Published: 6/1/2003
Authors: Jabez J McClelland, Shannon Bradley Hill
Abstract: We produce single Cr atoms on demand by feedback control of loading and loss from a magneto-optical trap. We observe single-atom occupation probabilities of over 98% and efficient ejection at rates up to 10 Hz.
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=620553

13. Characterization of an Infrared Spectrograph for Non-Contact Thermometry Applications Using a Sodium Heat Pipe Blackbody, ed. by A.E. Rozlosnik and R.B. Dinwiddie
Published: 1/1/2001
Authors: Benjamin K Tsai, J F Widmann, M Bundy, Shannon Bradley Hill
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=104790

14. Patterning of Octadecylsiloxane Self-assembled Monolayers on Si(100) using Ar(^u3^P^d0^,2) Atoms
Published: 5/1/1999
Authors: Shannon Bradley Hill, C Haich, F Dunning, G Walters, Jabez J McClelland, Robert Celotta, H Craighead, J Han, D Tannenbaum
Abstract: ^u^^d^ We report the use of metastable (Ar^u3^P^d0,2^) atoms and a physical mask to pattern octadecylsiloxane self-assembled monolayers grown directly onsilicon surfaces. The damage to the monolayer is confirmed using lateral force microscopy, change ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=620509

15. Optics for Extreme Ultraviolet Lithography
Published: Date unknown
Authors: Steven Grantham, Charles S. Tarrio, Shannon Bradley Hill, Thomas B Lucatorto
Abstract: Extreme Ultraviolet Lithography (EUVL) is considered by many to be the next generation lithography that will fabricate integrated circuits in the next decade. Although EUVL is conceptually similar to optical or deep-UV lithography, it represents a m ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=840225