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Author: david gundlach

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51. Low-Frequency Noise Characterizations of ZnO Nanowires Field Effect Transistors
Published: 2/28/2007
Authors: Wenyong Wang, Hao Xiong, Monica D Edelstein, David J Gundlach, John S Suehle, Curt A Richter, Woong-Ki Hong, Takhee Lee
Abstract: Field effect transistors (FETs) of single-crystalline ZnO nanowires have been fabricated and low frequency (f) noise characterizations of the ZnO nanowire FETs have been performed for the first time. The obtained noise power spectra show a pronounced ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32398

52. A Unique Photoemission Method to Measure Semiconductor Heterojunction Band Offsets
Published: 1/2/0013
Authors: Qin Zhang, Rui Li, Rusen Yan, Thomas Kosel, Grace Xing, Alan Seabaugh, Kun Xu, Oleg A Kirillov, David J Gundlach, Curt A Richter, Nhan V Nguyen
Abstract: We report a unique way to measure the energy band offset of a heterojunction by exploiting the light absorption profile in the heterojunction under visible-ultraviolet internal photoemission. This method was used to successfully determine the band a ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912713

53. Direct Measurement of Intrinsic Dirac Point and Fermi level at Graphene/Oxide interface and Its Band Alignment by Cavity Enhanced Internal Photoemission
Published: 12/17/0012
Authors: Kun Xu, Caifu Zeng, Qin Zhang, Rusen Yan, Peide Ye, Kang Wang, Alan C. Seabaugh, Huili G. Xing, John S Suehle, Curt A Richter, David J Gundlach, Nhan V Nguyen
Abstract: We report the first direct measurement of the Dirac point, the Fermi level, and the work function of graphene by performing internal photoemission measurements on a graphene/SiO2/Si structure with a unique optical-cavity enhanced test structure. ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912242