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Author: david gundlach

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51. Contact-induced crystallinity for high-performance soluble acene-based transistors and circuits
Published: 3/8/2008
Authors: David J Gundlach, James E Royer, SK Park, Sankar Subramanian, Oana Jurchescu, Behrang H Hamadani, Andrew Moad, Regis J Kline, LC Teague, Oleg A Kirillov, Curt A Richter, Lee J Richter, Sean R Parkin, Thomas Jackson, JE Anthony
Abstract: The use of organic materials presents a tremendous opportunity to significantly impact the functionality and pervasiveness of large-area electronics. Commercialization of this technology requires reduction in manufacturing costs by exploiting inexpen ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=854062

52. Contact Induced Crystallinity for High Performance Soluble Acene-Based TFTs
Published: 2/17/2008
Authors: David J Gundlach, James Royer, Behrang H Hamadani, Lucile C. Teague, Andrew J Moad, Oana Jurchescu, Oleg A Kirillov, Lee J Richter, James G. Kushmerick, Curt A Richter, Sungkyu Park, Thomas Jackson, Sankar Subramanian, John E Anthony
Abstract: Organic electronics present a tremendous opportunity to significantly impact the functionality and pervasiveness of large-area electronics. However, the lack of low-temperature low-cost deposition and patterning techniques limits the potential for th ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32683

53. Undoped polythiophene FETs with field-effect mobility of 1 cm^2 V^-1 s^-1
Published: 12/29/2007
Authors: Behrang H Hamadani, Iain McCulloch, Martin Heeney, David J Gundlach
Abstract: We report on charge transport in organic field-effect transistors based on (2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene) as the active polymer layer with saturation field-effect mobilities as large as 1 cm2 V-1 s-1. The dependence of mob ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32793

54. Distinguishing Between Nonlinear Channel Transport and Contact Effects in Organic FETs
Published: 8/30/2007
Authors: Behrang H Hamadani, Jeremy LeBoeuf, R J Kline, Iain McCulloch, Martin Heeney, Curt A Richter, Lee J Richter, David J Gundlach
Abstract: We investigate charge injection and transport in organic field-effect transistors fabricated by using poly(2,5-bis(3-tetradecylthiophene-2-yl)thieno[3,2-b]thiophene) (pBTTT-C14) as the active polymer layer. We show that in high mobility devices where ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32741

55. Influence of source-drain electric field on mobility and charge transport in organic field-effect transistors
Published: 8/21/2007
Authors: Behrang H Hamadani, R J Kline, Iain McCulloch, Martin Heeney, Curt A Richter, David J Gundlach
Abstract: We report on a strong field-dependent mobility in OFETs fabricated by using poly(2,5-bis(3-alkylthiophene-2-yl)thieno[3,2-b]thiophene) (pBTTT-C14) as the active polymer layer. Charge transport and mobilities in devices annealed in the mesophase show ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32661

56. I-NEMI 2007 Organic and Printed Electronics Roadmap
Published: 4/2/2007
Authors: Jan Obrzut, Regis J Kline, Eric K Lin, David J Gundlach, Daniel Gamota
Abstract: This roadmap provides an overview of the most critical technologies necessary for commercial launch and market diffusion of organic & printed electronics based products. To the best of our knowledge, this roadmap is the first of its kind and as such ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=854054

57. Organic Electronics: Low Power, High Impact
Published: 3/1/2007
Author: David J Gundlach
Abstract: Reducing the operating voltage and power consumption of organic-based logic circuits for portable applications is a critical step towards organic electronics becoming a commercial technology.
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32596

58. Low-Frequency Noise Characterizations of ZnO Nanowires Field Effect Transistors
Published: 2/28/2007
Authors: Wenyong Wang, Hao Xiong, Monica D Edelstein, David J Gundlach, John S Suehle, Curt A Richter, Woong-Ki Hong, Takhee Lee
Abstract: Field effect transistors (FETs) of single-crystalline ZnO nanowires have been fabricated and low frequency (f) noise characterizations of the ZnO nanowire FETs have been performed for the first time. The obtained noise power spectra show a pronounced ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32398

59. A Unique Photoemission Method to Measure Semiconductor Heterojunction Band Offsets
Published: 1/2/0013
Authors: Qin Q. Zhang, Rui Li, Rusen Yan, Thomas Kosel, Grace Xing, Alan Seabaugh, Kun Xu, Oleg A Kirillov, David J Gundlach, Curt A Richter, Nhan V Nguyen
Abstract: We report a unique way to measure the energy band offset of a heterojunction by exploiting the light absorption profile in the heterojunction under visible-ultraviolet internal photoemission. This method was used to successfully determine the band a ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912713

60. Direct Measurement of Intrinsic Dirac Point and Fermi level at Graphene/Oxide interface and Its Band Alignment by Cavity Enhanced Internal Photoemission
Published: 12/17/0012
Authors: Kun Xu, Caifu Zeng, Qin Q. Zhang, Rusen Yan, Peide Ye, Kang Wang, Alan C. Seabaugh, Huili G. Xing, John S Suehle, Curt A Richter, David J Gundlach, Nhan V Nguyen
Abstract: We report the first direct measurement of the Dirac point, the Fermi level, and the work function of graphene by performing internal photoemission measurements on a graphene/SiO2/Si structure with a unique optical-cavity enhanced test structure. ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912242



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