NIST logo

Publications Portal

You searched on:
Author: david gundlach

Displaying records 51 to 59.
Resort by: Date / Title

51. Contact Induced Crystallinity for High Performance Soluble Acene-Based TFTs
Published: 2/17/2008
Authors: David J Gundlach, James Royer, Behrang H Hamadani, Lucile C. Teague, Andrew J Moad, Oana Jurchescu, Oleg A Kirillov, Lee J Richter, James G. Kushmerick, Curt A Richter, Sungkyu Park, Thomas Jackson, Sankar Subramanian, John E Anthony
Abstract: Organic electronics present a tremendous opportunity to significantly impact the functionality and pervasiveness of large-area electronics. However, the lack of low-temperature low-cost deposition and patterning techniques limits the potential for th ...

52. Undoped polythiophene FETs with field-effect mobility of 1 cm^2 V^-1 s^-1
Published: 12/29/2007
Authors: Behrang H Hamadani, Iain McCulloch, Martin Heeney, David J Gundlach
Abstract: We report on charge transport in organic field-effect transistors based on (2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene) as the active polymer layer with saturation field-effect mobilities as large as 1 cm2 V-1 s-1. The dependence of mob ...

53. Distinguishing Between Nonlinear Channel Transport and Contact Effects in Organic FETs
Published: 8/30/2007
Authors: Behrang H Hamadani, Jeremy LeBoeuf, R J Kline, Iain McCulloch, Martin Heeney, Curt A Richter, Lee J Richter, David J Gundlach
Abstract: We investigate charge injection and transport in organic field-effect transistors fabricated by using poly(2,5-bis(3-tetradecylthiophene-2-yl)thieno[3,2-b]thiophene) (pBTTT-C14) as the active polymer layer. We show that in high mobility devices where ...

54. Influence of source-drain electric field on mobility and charge transport in organic field-effect transistors
Published: 8/21/2007
Authors: Behrang H Hamadani, R J Kline, Iain McCulloch, Martin Heeney, Curt A Richter, David J Gundlach
Abstract: We report on a strong field-dependent mobility in OFETs fabricated by using poly(2,5-bis(3-alkylthiophene-2-yl)thieno[3,2-b]thiophene) (pBTTT-C14) as the active polymer layer. Charge transport and mobilities in devices annealed in the mesophase show ...

55. I-NEMI 2007 Organic and Printed Electronics Roadmap
Published: 4/2/2007
Authors: Jan Obrzut, Regis J Kline, Eric K Lin, David J Gundlach, Daniel Gamota
Abstract: This roadmap provides an overview of the most critical technologies necessary for commercial launch and market diffusion of organic & printed electronics based products. To the best of our knowledge, this roadmap is the first of its kind and as such ...

56. Organic Electronics: Low Power, High Impact
Published: 3/1/2007
Author: David J Gundlach
Abstract: Reducing the operating voltage and power consumption of organic-based logic circuits for portable applications is a critical step towards organic electronics becoming a commercial technology.

57. Low-Frequency Noise Characterizations of ZnO Nanowires Field Effect Transistors
Published: 2/28/2007
Authors: Wenyong Wang, Hao Xiong, Monica D Edelstein, David J Gundlach, John S Suehle, Curt A Richter, Woong-Ki Hong, Takhee Lee
Abstract: Field effect transistors (FETs) of single-crystalline ZnO nanowires have been fabricated and low frequency (f) noise characterizations of the ZnO nanowire FETs have been performed for the first time. The obtained noise power spectra show a pronounced ...

58. A Unique Photoemission Method to Measure Semiconductor Heterojunction Band Offsets
Published: 1/2/0013
Authors: Qin Q. Zhang, Rui Li, Rusen Yan, Thomas Kosel, Grace Xing, Alan Seabaugh, Kun Xu, Oleg A Kirillov, David J Gundlach, Curt A Richter, Nhan V Nguyen
Abstract: We report a unique way to measure the energy band offset of a heterojunction by exploiting the light absorption profile in the heterojunction under visible-ultraviolet internal photoemission. This method was used to successfully determine the band a ...

59. Direct Measurement of Intrinsic Dirac Point and Fermi level at Graphene/Oxide interface and Its Band Alignment by Cavity Enhanced Internal Photoemission
Published: 12/17/0012
Authors: Kun Xu, Caifu Zeng, Qin Q. Zhang, Rusen Yan, Peide Ye, Kang Wang, Alan C. Seabaugh, Huili G. Xing, John S Suehle, Curt A Richter, David J Gundlach, Nhan V Nguyen
Abstract: We report the first direct measurement of the Dirac point, the Fermi level, and the work function of graphene by performing internal photoemission measurements on a graphene/SiO2/Si structure with a unique optical-cavity enhanced test structure. ...

Search NIST-wide:

(Search abstract and keywords)

Last Name:
First Name:

Special Publications:

Looking for a NIST Special Publication (NIST SP Series)? Place the series number and dash in the report number field (Example: 800-) and begin your search.

  • SP 250-XX: Calibration Services
  • SP 260-XX: Standard Reference Materials
  • SP 300-XX: Precision Measurement and Calibration
  • SP 400-XX: Semiconductor Measurement Technology
  • SP 480-XX: Law Enforcement Technology
  • SP 500-XX: Computer Systems Technology
  • SP 700-XX: Industrial Measurement Series
  • SP 800-XX: Computer Security Series
  • SP 823-XX: Integrated Services Digital Network Series