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Author: martin green

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21. The Use of Apertures to Create Discrete Combinatorial Libraries Using Pulsed Laser Deposition
Published: 5/18/2007
Authors: Nabil Bassim, Peter K. Schenck, Eugene Donev, Edwin J Heilweil, Eric J Cockayne, Martin L Green, Leonard Feldman
Abstract: In Pulsed-Laser Deposition (PLD), there are many processing parameters that influence film properties which may be studied such as substrate-target distance, background reactive gas pressure, laser energy, substrate temperature and composition in mul ...

22. A High-Throughput Thermoelectric Power-Factor Screening Tool for Rapid Construction of Thermoelectric Property Diagrams
Published: 1/23/2007
Authors: Makoto Otani, Nathan Lowhorn, Peter K. Schenck, Winnie K Wong-Ng, Martin L Green, K Itaka, H Koinuma
Abstract: We have developed a high throughput screening tool that maps out thermoelectric power factors of combinatorial composition-spread film libraries. The screening tool allows us to measure the electrical conductivity and Seebeck coefficient of over 1000 ...

23. Design and Spectroscopic Reflectometry Characterization of Pulsed Laser Deposition Combinatorial Libraries
Published: 1/22/2007
Authors: Peter K. Schenck, Nabil Bassim, Makoto Otani, Hiroyuki Oguchi, Martin L Green
Abstract: The goal of the design of pulsed laser deposition (PLD) combinatorial library films is to optimize the compositional coverage of the films while maintaining a uniform thickness. The deposition pattern of excimer laser PLD films can be modeled with a ...

24. Combinatorial Study of Ni-Ti-Pt Ternary Metal Gate Electrodes on HfO2 for the Advanced Gate Stack
Published: 10/2/2006
Authors: K S Chang, Martin L Green, John S Suehle, Eckhard Vogel, Hao Xiong, Jason Hattrick-Simpers, Ichiro Takeuchi, O Famodu, K Ohmori, P Ahmet, T Chikyow, Prashant Majhi, B -H Lee

25. Combinatorial Study of Ni-Ti-Pt Ternary Metal Gate Electrodes on HfO^d2^ for the Advanced Gate Stack
Published: 10/2/2006
Authors: Kao-Shuo Chang, Martin L Green, John S Suehle, Eric M. Vogel, Hao Xiong, Jason Hattrick-Simpers, Ichiro Takeuchi, O Famodu, K Ohnaka, T Chikyow, Prashant Majhi, B H Lee, M Gardner
Abstract: We have fabricated combinatorial Ni-Ti-Pt ternary metal gate thin film libraries on HfO2 using magnetron co-sputtering, to investigate flat-band voltage shift (DVfb) and leakage current density (JL) variations. Wavelength dispersive spectroscopy (WDS ...

26. A Combinatorial Study of Metal Gate/HfO2 MOSCAPS
Published: 9/1/2006
Authors: Martin L Green, K S Chang, Ichiro Takeuchi, T Chikyow

27. The Nucleation of Atomic Layer Deposited HfO2 Films, and Evolution of Their Microstruture, Studied by Grazing Incidence Small Angle X-ray Scattering Using Synchrotron Radiation
Published: 1/16/2006
Authors: Martin L Green, Andrew John Allen, Xiang Li, Junling Wang, J Ilavsky, A Delabie, R Puurunen, B Brijs

28. Strain Relaxation in Patterned Strained Silicon Directly on Insulator Structures
Published: 12/19/2005
Authors: R Z Lei, W Tsai, I Aberg, T B O'Reilly, J L Hoyt, D A Antoniadis, H I Smith, Albert J. Paul, Martin L Green, J Li, R Hull
Abstract: Strain relaxation is studied in Strained Silicon Directly on Insulator (SSDOI) substrates patterned with nano-scale features. Using interference lithography, biaxially-strained SSDOI substrates with 30 nm-thick strained Si on insulator films were pa ...

29. A Combinatorial Study of Metal Gate/HfO2-MOSCAPS
Published: Date unknown
Authors: Martin L Green, Kao-Shuo Chang, Ichiro Takeuchi, T Chikyow
Abstract: Combinatorial methodology is a rapid technique for surveying new gate dielectrics and gate metal electrodes for the very complex advanced CMOS gate stack. Here, we report on a typical metal gate electrode alloy system, the Ni-Ti-Pt ternary. We have ...

30. Rapid Detection of Thin-Film Interfacial Reactions by MEMS-DSC
Published: Date unknown
Authors: Lawrence P. Cook, Richard E Cavicchi, Yanbao Zhang, Mark D Vaudin, Christopher B Montgomery, William F. Egelhoff Jr., Martin L Green, Leslie Allen
Abstract: A MEMS-based differential scanning calorimeter (DSC) has been used to characterize the Ni/Si interfacial reaction in thin films at ramp rates of 940 C/s and 3760 C/s. The DSC devices were fabricated using CMOS semiconductor processing technology, ...

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