Publications Portal

You searched on:
Author: john dagata

Displaying records 31 to 40 of 64 records.
Resort by: Date / Title

31. Electronic Properties of GaAs Surfaces Etched in an Electron Cyclotron Resonance Source and Chemically Passivated Using P2S5
Published: 1/1/1998
Authors: O Glembocki, J Tuchman, John A. Dagata, K Ko, S Pang, C Stutz
Abstract: Photoreflectance has been used to study the electronic properties of (100) GaAs surfaces exposed to a Cl2/Ar plasma generated by an electron cyclotron resonance source and subsequently passivated by P2S5. The plasma etch shifts the Fermi level of p-G ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=821782

32. The Role of Space Charge in Scanned Probe Oxidation
Published: 1/1/1998
Author: John A. Dagata
Abstract: The growth rate and electrical character of nanostructures produced by scanned probe oxidation are investigated by integrating an in-situ electrical force characterization technique, scanning Maxwell-stress microscopy, into the fabrication process. S ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820888

33. Understanding Scanned Probe Oxidation of Silicon
Published: 1/1/1998
Authors: John A. Dagata, T Inoue, J Itoh, H Yokoyama
Abstract: A model for scanned probe microscope (SPM) silicon oxidation is presented. The model was derived from a consideration of the space-charge dependence of this solid-state reaction as a function of substrate doping type/level and has been verified exper ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=821775

34. Voltage Modulation Scanned Probe Oxidation (Abstract)
Published: 1/1/1998
Authors: John A. Dagata, T Inoue, J Itoh, K Matsumoto, H Yokoyama
Abstract: This talk describes methods for enhancing the growth rate and electrical characteristics of nanostructures produced on silicon and titanium substrates by scanned probe microscope (SPM) oxidation. Direct oxidation of a substrate by the intense electr ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=823101

35. Applications of the Rapidly Renewable Lap
Published: 11/1/1997
Authors: R E. Parks, E Robert, Christopher J. Evans, David J Roderick, J David, John A. Dagata
Abstract: The rapidly renewable lap is based on the simple concept of generating the figure needed in a lap substrate and then replicating it into a thin film slumped over the substrate. Based on this concept, we describe how efficient laps can be constructed ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=821593

36. Evaluation of Scanning Maxwell-Stress Microscopy for SPM-Based Nanoelectronics
Published: 9/1/1997
Author: John A. Dagata
Abstract: A preliminary evaluation of the compatibility, spatial resolution, and sensitivity of scanning Maxwell-stress microscopy (SMM) as an in situ diagnostic technique for SPM oxidation of silicon is presented. These results indicate that SMM will provide ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820835

37. Industrial Uses of STM and AFM
Published: 1/1/1997
Authors: Theodore Vincent Vorburger, John A. Dagata, G. Wilkening, K Iizuka
Abstract: We review the field of STM and AFM as applied to industrial problems, and we classify the applications into four classes: research with potential benefit to industry, research performed by industry, applications off-line in manufacturing, and applica ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820882

38. Workshop Discussion: A Framework for Standards Development and the Future of the IASPM Workshops
Published: 1/1/1997
Author: John A. Dagata
Abstract: A proposal to develop the Industrial Applications of Scanned Probe Microscopy (IASPM) workshops, which NIST has co-sponsored with Sematech, the ASTM E42.14 subcommittee, and the American Vacuum Society, over the past four years into a forum for assis ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820836

39. Scanned Probe Techniques for the Electrical Characterization of Semiconductor Devices
Published: 7/1/1995
Authors: John A. Dagata, Joseph J Kopanski
Abstract: The spatial resolution, sensitivity, and accuracy required for electrical characterization of device structures in the semiconductor industry suggest that scanned probe microscopy (SPM) tools may offer an alternative to existing measurement technique ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820733

40. Scanning Probe Techniques for the Electrical Characterization of Semiconductor Devices
Published: 7/1/1995
Authors: John A. Dagata, Joseph J Kopanski
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=16678