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You searched on: Author: bryan barnes

Displaying records 31 to 40 of 41 records.
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31. 193 nm Angle-Resolved Scatterfield Microscope for Semiconductor Metrology
Published: 8/24/2009
Authors: Martin Y Sohn, Richard Quintanilha, Bryan M Barnes, Richard M Silver
Abstract: An angle-resolved scatterfield microscope (ARSM( feating 193 nm excimer laser light wa developed for measuring critical dimension (CD) and overlay of nanoscale targets as used in semiconductor metrology. The microscope is designed to have a wide and ...

32. Angle-resolved Optical Metrology using Multi-Technique Nested Uncertainties
Published: 8/15/2009
Authors: Richard M Silver, Bryan M Barnes, Hui Zhou, Nien F Zhang, Ronald G Dixson
Abstract: This paper introduces recent advances in scatterfield microscopy using improved normalization and fitting procedures. Reduced measurement uncertainties are obtained through the use of more accurate normalization procedures in combination with better ...

33. Through-focus Scanning and Scatterfield Optical Methods for Advanced Overlay Target Analysis
Published: 9/1/2008
Authors: Ravikiran Attota, Michael T. Stocker, Richard M Silver, Nathanael A Heckert, Hui Zhou, Richard J Kasica, Lei Chen, Ronald G Dixson, Ndubuisi George Orji, Bryan M Barnes, Peter Lipscomb
Abstract: In this paper we present overlay measurement techniques that use small overlay targets for advanced semiconductor applications. We employ two different optical methods to measure overlay using modified conventional optical microscope platforms. They ...

34. Optical Through-Focus Technique that Differentiates Small Changes in Line Width, Line Height and Sidewall Angle for CD, Overlay, and Defect Metrology Applications
Published: 4/16/2008
Authors: Ravikiran Attota, Richard M Silver, Bryan M Barnes
Abstract: We present a new optical technique for dimensional analysis of sub 100 nm sized targets by analyzing through-focus images obtained using a conventional bright-field optical microscope.  We present a method to create through-focus image maps (TFIM) us ...

35. Optical Critical Dimension Measurement of Silicon Grating Targets Using Back Focal Plane Scatterfield Microscopy
Published: 1/2/2008
Authors: Heather J Patrick, Ravikiran Attota, Bryan M Barnes, Thomas Avery Germer, Michael T. Stocker, Richard M Silver, Michael R Bishop
Abstract: We demonstrate optical critical dimension measurement of lines in silicon grating targets using back focal plane scatterfield microscopy. In this technique, angle-resolved diffraction signatures are obtained from grating targets by imaging the back ...

36. Extending the Limits of Image-Based Optical Metrology
Published: 6/20/2007
Authors: Richard M Silver, Bryan M Barnes, Ravikiran Attota, Jay Shi Jun, Michael T. Stocker, Egon Marx, Heather J Patrick
Abstract: We have developed a set of techniques, referred to as scatterfield microscopy, in which the illumination is engineered in combination with appropriately designed metrology targets. Previously we reported results from samples with sub-50 nm sized fea ...

37. Zero-Order Imaging of Device-Sized Overlay Targets Using Scatterfield Microscopy
Published: 3/1/2007
Authors: Bryan M Barnes, Lowell P. Howard, P Lipscomb, Richard M Silver
Abstract: Patterns of lines and trenches with nominal linewidths of 50 nm have been proposed for use as an overlay target appropriate for placement inside the patterned wafer die.  The NIST Scatterfield Targets feature groupings of eight lines and/or tren ...

38. Fundamental Limits of Optical Critical Dimension Metrology: A Simulation Study
Published: 1/1/2007
Authors: Richard M Silver, Thomas Avery Germer, Ravikiran Attota, Bryan M Barnes, B Bunday, J Allgair, Egon Marx, Jay Shi Jun
Abstract: This paper is a comprehensive summary and analysis of a SEMATECH funded project to study the limits of optical critical dimension scatterometry.  The project was focused on two primary elements: 1) the comparison, stability, and validity of indu ...

39. Illumination Optimization for Optical Semiconductor Metrology
Published: 9/1/2006
Authors: Bryan M Barnes, L Howard, Richard M Silver
Abstract: Uniform sample illumination via K hler illumination, is achieved by establishing a pair of conjugate focal planes; a light source is focused onto the condenser lens aperture while the image of the field aperture is focused at the plane of the specime ...

40. Koehler Illumination for High-Resolution Optical Metrology
Published: 3/1/2006
Authors: Martin Y Sohn, Bryan M Barnes, Lowell P. Howard, Richard M Silver, Ravikiran Attota, Michael T. Stocker
Abstract: Accurate preparation of illumination is critical for high-resolution optical metrology applications such as line width and overlay measurements. To improve the detailed evaluation and alignment of the illumination optics, we have separated Koehler il ...

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  • SP 250-XX: Calibration Services
  • SP 260-XX: Standard Reference Materials
  • SP 300-XX: Precision Measurement and Calibration
  • SP 400-XX: Semiconductor Measurement Technology
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