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You searched on: Author: richard allen

Displaying records 21 to 30 of 125 records.
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21. Wafer Bond Strength MS5-1107 Revision and Future plans
Published: 11/2/2009
Author: Richard A Allen
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907002

22. MEMS Standards Development at the National Institute of Standard and Technology
Published: 10/12/2009
Author: Richard A Allen
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907000

23. Nanoindentation of Si Nanostructures: Buckling and Friction at Nanoscales
Published: 9/18/2009
Authors: Huai Huang, Bin Li, Qiu Zhao, Zhiquan Luo, Jay Im, Min Kang, Richard A Allen, Michael W. Cresswell, Rui Huang, Paul S. Ho
Abstract: A nanoindentation system was employed to characterize mechanical properties of silicon nanolines (SiNLs), which were fabricated by an anisotropic wet etching (AWE) process. The SiNLs had the linewidth ranging from 24 nm to 90 nm, having smooth a ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=902683

24. MEMS in Action: RoboCup Nanogram 2009
Published: 8/1/2009
Authors: Richard A Allen, Craig Dyer McGray
Abstract: From June 29 through July 5, 2009 teams from around the world participated in the International RoboCup competition, held in Graz, Austria. In addition to humanoid robots playing soccer on turf fields, companion robots demonstrating their ability ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=903478

25. Indentation of Single-Crystal Silicon Nanolines: Buckling and Contact Friction at Nanoscale
Published: 4/8/2009
Authors: Bin Li, Qiu Zhao, Huai Huang, Zhiquan Luo, Jay Im, Michael W. Cresswell, Richard A Allen, Min K. Kang, Rui Huang, Paul S. Ho
Abstract: Silicon nanostructures are essential building blocks for nanoelectronic devices and nano-electromechanical systems (NEMS). Mechanical characterization at nanoscale is important for practical applications but remains challenging as the mechanical prop ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=33156

26. Mapping the Edge-Roughness of Test Structure Features for Nanometer-Level CD Reference-Materials
Published: 4/2/2009
Authors: Michael W. Cresswell, M Davidson, Geraldine I. Mijares, Richard A Allen, Jon C Geist, M R Bishop
Abstract: The near-term objective of the work reported here is developing a protocol for rapidly mapping CD and edge roughness from high-resolution SEM images of reference-material features patterned on SCCDRM chips. The longer term mission is to formulate a ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=901520

27. Controlled Formation and Resistivity Scaling of Nickel Silicide Nanolines
Published: 2/25/2009
Authors: Bin Li, Zhiquan Luo, Paul S. Ho, Li Shi, Lew Rabenberg, JiPing Zhou, Richard A Allen, Michael W. Cresswell
Abstract: We demonstrate a top-down method to fabricate nickel mono-silicide (NiSi) nanolines with smooth side walls and linewidths down to 15 nm. Four probe electrical measurements revealed that the electrical resistivity at room temperature remained constant ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32991

28. Comparison of Measurement Techniques for Linewidth Metrology on Advanced Photomasks
Published: 2/19/2009
Authors: Stewart Smith, Andreas Tsiamis, Martin McCallum, Andrew Hourd, J Stevenson, Anthony Walton, Ronald G Dixson, Richard A Allen, James Edward Potzick, Michael W. Cresswell, Ndubuisi George Orji
Abstract: This paper compares electrical, optical, and atomic force microscope (AFM) measurements of critical dimension (CD)made on a chrome on quartz photomask. Test structures suitable for direct, on-mask electrical probing have been measured using the above ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=901862

29. Experimental and Simulation Studies of Resistivity of Nanoscale Copper Films
Published: 2/19/2009
Authors: Emre Yarimbiyik, Harry A. Schafft, Richard A Allen, Mark D Vaudin, Mona E. Zaghloul
Abstract: The effect of film thickness on the resistivity of thin, evaporated copper films (approximately 10 nm to 150 nm thick) was determined from sheet resistance, film thickness, and mean grain-size measurements by using four-point probe, profilometer, and ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32595

30. A Standard Method for Measuring Wafer Bond Strength for MEMS Applications
Published: 12/23/2008
Authors: Richard A Allen, Janet M Cassard, Winthrop A. Baylies, David Thomas Read, George David Quinn, Frank W DelRio, Kevin T. Turner, Michael Bernasch, Joerg Bagdahn
Abstract: A round robin, to provide precision and bias data for SEMI standard MS5-1107, Test Method for Wafer Bond Strength Measurements Using Micro-Chevron Test Structures, in underway. The precision and bias data, combined with experience in applying the tes ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=33132



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