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|Author(s):||Zakariae Chbili; Kin P. Cheung; Jason P. Campbell; John S. Suehle; D. E. Ioannou; Aivars Lelis; Sei-Hyung Ryu;|
|Title:||Unusual Bias Temperature Instability in SiC DMOSFET|
|Published:||March 03, 2014|
|Abstract:||We observe an unusual instability in the SiC DMOSFET transistor characteristics. From a series of bias conditions at elevated temperatures, we conclude that a high density of hole traps in the oxide near the SiO2/SiC interface are responsible.|
|Conference:||2013 IEEE International Integrated Reliability Workshop|
|Proceedings:||International Integrated Reliability Workshop Final Report|
|Pages:||pp. 90 - 93|
|Location:||Stanford Sierra Camp, CA|
|Dates:||October 14-17, 2013|
|Keywords:||SiC, DMOSFET, BTI|
|PDF version:||Click here to retrieve PDF version of paper (3MB)|