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Publication Citation: Unusual Bias Temperature Instability in SiC DMOSFET

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Author(s): Zakariae Chbili; Kin P. Cheung; Jason P. Campbell; John S. Suehle; D. E. Ioannou; Aivars Lelis; Sei-Hyung Ryu;
Title: Unusual Bias Temperature Instability in SiC DMOSFET
Published: March 03, 2014
Abstract: We observe an unusual instability in the SiC DMOSFET transistor characteristics. From a series of bias conditions at elevated temperatures, we conclude that a high density of hole traps in the oxide near the SiO2/SiC interface are responsible.
Conference: 2013 IEEE International Integrated Reliability Workshop
Proceedings: International Integrated Reliability Workshop Final Report
Pages: pp. 90 - 93
Location: Stanford Sierra Camp, CA
Dates: October 14-17, 2013
Keywords: SiC, DMOSFET, BTI
Research Areas: Reliability
PDF version: PDF Document Click here to retrieve PDF version of paper (3MB)