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|Author(s):||Jason T. Ryan; Richard G. Southwick; Jason P. Campbell; Kin P. Cheung; John S. Suehle;|
|Title:||Frequency Dependent Charge Pumping -- A Defect Depth Profiling Tool?|
|Published:||January 31, 2013|
|Abstract:||We investigate the validity of using frequency-dependent charge pumping (FD-CP) to determine bulk defect depth distributions. Using simple physical arguments we conclude that: (1) the effective tunneling length to a bulk defect can be very different than its actual physical depth, and (2) only a fraction of detrapping charge may contribute to the CP current (ICP) resulting in analysis errors. Thus, the relationship between frequency and defect depth is much more complex than what has been previously reported.|
|Conference:||IEEE International Integrated Reliability Workshop|
|Proceedings:||IEEE International Integrated Reliability Workshop Final Report|
|Pages:||pp. 147 - 150|
|Location:||South Lake Tahoe, CA|
|Dates:||October 14-18, 2012|
|Research Areas:||Semiconductors, Characterization|