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Publication Citation: Frequency Dependent Charge Pumping -- A Defect Depth Profiling Tool?

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Author(s): Jason T. Ryan; Richard G. Southwick; Jason P. Campbell; Kin P. Cheung; John S. Suehle;
Title: Frequency Dependent Charge Pumping -- A Defect Depth Profiling Tool?
Published: January 31, 2013
Abstract: We investigate the validity of using frequency-dependent charge pumping (FD-CP) to determine bulk defect depth distributions. Using simple physical arguments we conclude that: (1) the effective tunneling length to a bulk defect can be very different than its actual physical depth, and (2) only a fraction of detrapping charge may contribute to the CP current (ICP) resulting in analysis errors. Thus, the relationship between frequency and defect depth is much more complex than what has been previously reported.
Conference: IEEE International Integrated Reliability Workshop
Proceedings: IEEE International Integrated Reliability Workshop Final Report
Pages: pp. 147 - 150
Location: South Lake Tahoe, CA
Dates: October 14-18, 2012
Research Areas: Semiconductors, Characterization