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|Author(s):||Chukwudi A. Okoro; Lyle E. Levine; Oleg A. Kirillov; Yaw S. Obeng; Ruqing Xu; Jonathan Z. Tischler; Wenjun Liu; Klaus Hummler;|
|Title:||X-Ray Micro-Beam Diffraction Determination of Full Stress Tensors in Cu TSVs|
|Published:||May 28, 2013|
|Abstract:||We report the first non-destructive, depth resolved determination of the full stress tensor in Cu through-silicon vias (TSVs), using synchrotron based micro-beam X-ray diffraction. Two adjacent Cu TSVs were studied; one deliberately capped with SiO2, the other without (uncapped). Both Cu TSVs were found to be in a state of tensile hydrostatic stress that fluctuated considerably with depth. The average hydrostatic stress across the capped and the uncapped Cu TSVs was found to be (99 MPa ± 13 MPa) and (118 MPa ± 18 MPa), respectively. This apparent disparity between the mean hydrostatic stresses is attributed to local differences in their microstructure, and not to the differences in capping.|
|Proceedings:||Proceeding of IEEE Electronic Components and Technology Conference (ECTC)|
|Pages:||pp. 648 - 652|
|Location:||Las Vegas, NV|
|Dates:||May 28-31, 2013|
|Research Areas:||Synchrotron, Metals, Semiconductor Materials|