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Publication Citation: Scanning Tunneling Microscopy of Gate Tunable Topological Insulator Bi2Se3 Thin Films

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Author(s): Tong Zhang; Niv Levy; Jeonghoon Ha; Young Kuk; Joseph A. Stroscio;
Title: Scanning Tunneling Microscopy of Gate Tunable Topological Insulator Bi2Se3 Thin Films
Published: March 12, 2013
Abstract: Electrical field control of the carrier density of topological insulators (TI) has greatly expanded the possible practical use of these materials. However, the combination of low temperature local probe studies and a gate tunable TI device remains challenging. We have overcome this limitation by scanning tunneling microscopy and spectroscopy measurements on in situ molecular beam epitaxy growth of Bi2Se3 films on SrTiO3 substrates with pre-patterned electrodes. Using this gating method, we are able to shift the Fermi level of the top surface states by ≈250 meV on a 3 nm thick Bi2Se3 device. We report field effect studies of the surface state dispersion, band gap, and electronic structure at the Fermi level.
Citation: Physical Review B
Volume: 87
Issue: 11
Keywords: scanning tunneling spectroscopy; scanning tunneling microscopy; topological insulator; Bi2Se3; field effect
Research Areas: Characterization, Nanometrology, and Nanoscale Measurements
DOI: http://dx.doi.org/10.1103/PhysRevB.87.115410  (Note: May link to a non-U.S. Government webpage)
PDF version: PDF Document Click here to retrieve PDF version of paper (3MB)