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|Author(s):||B. P. Geiser; Eric B. Steel; Karen T. Henry; D. Olson; T.J. Prosa;|
|Title:||Analysis of Implanted Silicon Dopant Profiles|
|Published:||September 01, 2013|
|Abstract:||Atom probe tomography implant dose measurements are reported for National Institute of Standards and Technology Standard Reference Material 2134 (As implant). Efforts were taken to manufacture specimens with limited variation in size and shape to minimize variation in physical reconstruction parameters. A tip-profile reconstruction was utilized where measurements of tip-profile, post-analysis specimen radius and sphere-to-cone radius ratio were required as inputs into the reconstruction process. A variation of 4% is observed in the dose measurement under these conditions. Various considerations necessary to narrow the observed variation in measured dose, toward the limit imposed by counting statistics, are discussed.|
|Pages:||pp. 179 - 185|
|Keywords:||atom probe tomography,dopant profile, semiconductor|
|Research Areas:||Semiconductors, Microelectronics, Industry|