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|Author(s):||Christina A. Hacker; Alain C. Diebold;|
|Title:||2012 Updates to the International Technology Roadmap for Semiconductors (ITRS) Metrology Chapter|
|Published:||January 01, 2013|
|Abstract:||During 2012, the main emphasis of the Metrology Technical Working Group was to revise the Metrology Technology Requirements Tables and initiate the new text for the 2013 revision of the International Technology Roadmap for Semiconductors (ITRS). The key areas of interest from the ITRS were in the 3-Dimensional nature of measurement needs and in revising the Lithography Metrology Technology requirements tables to clarify critical dimension (CD) measurement requirements. The need to measure 3D features as well as the films and structures fabricated on these features illustrates the links between Lithography metrology and measurements done for Front end Processing (FEP) or Interconnects. These 2012 Metrology Roadmap updates are discussed below.|
|Citation:||Future Fab International|
|Pages:||pp. 96 - 100|
|Research Areas:||Semiconductors, Characterization, Lithography Metrology, Critical Dimension and Overlay Metrology, Interconnect and Packaging Metrology|