| Author(s): |
Richard G. Southwick; Kin P. Cheung; Jason P. Campbell; Serghei Drozdov; Jason T. Ryan; John S. Suehle; Anthony Oates; |
| Title: |
Physical Model for Random Telegraph Noise Amplitudes and Implications |
| Published: |
June 12, 2012 |
| Abstract: |
Random Telegraph Noise (RTN) has been shown to surpass random dopant fluctuations as a cause for decananometer device variability, through the measurement of a large number of ultra-scaled devices [1]. The most worrisome aspect of RTN is the tail of the amplitude distribution – the limiting cases that are rare but nevertheless wreak havoc on circuit yield and reliability. Since one cannot realistically measure enough devices to imitate a large circuit, a physics-based quantitative model is urgently needed to replace the brute force approach. Recently we introduced a physical model for RTN [2-3] but it contains a serious error. In this paper, we developed and experimentally verified a new model that provides a physical understanding of RTN amplitude. By providing a quantitative link to device parameters, it points the way to control RTN in decananometer devices. |
| Conference: |
Silicon Nanoelectronics Workshop |
| Location: |
Honolulu, HI |
| Dates: |
June 10-12, 2012 |
| Keywords: |
Random telegraph noise; flicker noise; 1/f noise; MOSFET |
| Research Areas: |
Semiconductors, Characterization |
