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|Author(s):||Richard G. Southwick; Kin P. Cheung; Jason P. Campbell; Serghei Drozdov; Jason T. Ryan; John S. Suehle; Anthony Oates;|
|Title:||Physical Model for Random Telegraph Noise Amplitudes and Implications|
|Published:||June 12, 2012|
|Abstract:||Random Telegraph Noise (RTN) has been shown to surpass random dopant fluctuations as a cause for decananometer device variability, through the measurement of a large number of ultra-scaled devices . The most worrisome aspect of RTN is the tail of the amplitude distribution ‹ the limiting cases that are rare but nevertheless wreak havoc on circuit yield and reliability. Since one cannot realistically measure enough devices to imitate a large circuit, a physics-based quantitative model is urgently needed to replace the brute force approach. Recently we introduced a physical model for RTN [2-3] but it contains a serious error. In this paper, we developed and experimentally verified a new model that provides a physical understanding of RTN amplitude. By providing a quantitative link to device parameters, it points the way to control RTN in decananometer devices.|
|Conference:||Silicon Nanoelectronics Workshop|
|Dates:||June 10-12, 2012|
|Keywords:||Random telegraph noise, flicker noise, 1/f noise, MOSFET|
|Research Areas:||Semiconductors, Characterization|