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Publication Citation: Physical Model for Random Telegraph Noise Amplitudes and Implications

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Author(s): Richard G. Southwick; Kin P. Cheung; Jason P. Campbell; Serghei Drozdov; Jason T. Ryan; John S. Suehle; Anthony Oates;
Title: Physical Model for Random Telegraph Noise Amplitudes and Implications
Published: June 12, 2012
Abstract: Random Telegraph Noise (RTN) has been shown to surpass random dopant fluctuations as a cause for decananometer device variability, through the measurement of a large number of ultra-scaled devices [1]. The most worrisome aspect of RTN is the tail of the amplitude distribution ‹ the limiting cases that are rare but nevertheless wreak havoc on circuit yield and reliability. Since one cannot realistically measure enough devices to imitate a large circuit, a physics-based quantitative model is urgently needed to replace the brute force approach. Recently we introduced a physical model for RTN [2-3] but it contains a serious error. In this paper, we developed and experimentally verified a new model that provides a physical understanding of RTN amplitude. By providing a quantitative link to device parameters, it points the way to control RTN in decananometer devices.
Conference: Silicon Nanoelectronics Workshop
Location: Honolulu, HI
Dates: June 10-12, 2012
Keywords: Random telegraph noise, flicker noise, 1/f noise, MOSFET
Research Areas: Semiconductors, Characterization