Take a sneak peek at the new NIST.gov and let us know what you think!
(Please note: some content may not be complete on the beta site.).

View the beta site
NIST logo

Publication Citation: Metrology for Nanosystems and Nanoelectronics Reliability Assessments

NIST Authors in Bold

Author(s): Yaw S. Obeng; Chukwudi A. Okoro; Joseph J. Kopanski;
Title: Metrology for Nanosystems and Nanoelectronics Reliability Assessments
Published: August 20, 2012
Abstract: The traditional models and techniques for studying reliability in integrated circuits may not be appropriate for nanoelectronics and nanosystems. In this paper, we present an overview of a number of materials and metrology techniques currently under development in our group at NIST. Among other topics, we will assess the techniques and models currently used for evaluating integrated circuit reliability, as well as present some new approaches.
Conference: 12th IEEE NanoTechnology Conference,
Proceedings: TBD
Location: Birmingham, -1
Dates: August 20-23, 2012
Keywords: CBCM, charge based capacitance measurement, interconnects, metrology techniques, nanoelectronics, reliability, three-dimensional integrated circuits, through silicon vias, TSVs
Research Areas: Microelectronics
PDF version: PDF Document Click here to retrieve PDF version of paper (750KB)