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|Author(s):||Hyuk-Jae Jang; Kurt Pernstich; David J. Gundlach; Oana Jurchescu; Curt A. Richter;|
|Title:||Observation of spin-valve effect in Alq3 using a low work function metal|
|Published:||September 07, 2012|
|Abstract:||We present the observation of magnetoresistance in Co/Ca/Alq3/Ca/NiFe spin-valve devices. Thin Ca layers contacting 150 nm thick Alq3 enable the injection of spin-polarized electrons into Alq3 due to engineering of the band alignment. The devices exhibit symmetric current-voltage (I-V) characteristics indicating identical metal contacts on Alq3 and up to 4% of positive magnetoresistance was observed at 4.5K. In contrast, simultaneously fabricated Co/Alq3/NiFe devices displayed asymmetric I-V curves due to the different metal electrodes, and spin-valve effects were not observed above noise level.|
|Citation:||Applied Physics Letters|
|Pages:||pp. 102412 - 102412-5|
|Research Areas:||Spintronics, Device Design and Characterization, Semiconductor Materials, Electronics|