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Publication Citation: Radio Frequency and Analog/Mixed-Signal Technologies

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Author(s): Herbert S. Bennett; John J. Pekarik;
Title: Radio Frequency and Analog/Mixed-Signal Technologies
Published: January 20, 2012
Abstract: This 2011 roadmap for radio frequency and analog/mixed-signal (RF and AMS) technologies presents the challenges, technology requirements, and potential solutions for the basic technology elements (transistors and passive devices). RF and AMS technologies are critical technologies for the rapidly diversifying semiconductor market that comprises many more applications than the wireless and wireline communications markets. In addition to RF and AMS technologies for wireless and wireline communications, this 2011 RF and AMS roadmap also considers requirements for low-frequency analog applications such as power management and display drivers. The technologies presented in this paper depend on many materials systems, some of which are compatible with complementary metal oxide semiconductor (CMOS) processing, such as SiGe and others of which have not traditionally been compatible with CMOS processing such as those compound semiconductors composed of elements from group III and V in the periodic table. Compound semiconductors become more significant as today's emerging research devices, especially those devices based on the More than Moore (MtM) technologies are deployed in the marketplace. The purposes of this 2011 RF and AMS technology roadmap as follows: 1. Present the challenges that RF and AMS technologies have in meeting the demands of exemplary applications shown in Figure RFAMS1. Application frequency bands from 0 to 0.4GHz, 0.4 GHz to 30GHz, and 30GHz to 300GHz generally drive different technology requirements and this is reflected in the chapter. In future years, we will be addressing applications beyond 300 GHz as they emerge in the marketplace. 2. Present the challenges and requirements of Si complementary oxide semiconductor (CMOS), BiCMOS (bipolar + CMOS), and SiGe heterojunction bipolar transistors (HBTs), III V compound semiconductor devices, High-Voltage MOS, and passive device technologies to meet the needs of these applications.
Citation: International Technology for Semiconductors Roadmap
Pages: 36 pp.
Research Areas: Electronics & Telecommunications, Semiconductors