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|Author(s):||Pragya R. Shrestha; Adaku Ochia; Kin P. Cheung; Jason P. Campbell; Helmut Baumgart; Gary Harris;|
|Title:||High Speed Endurance and Switching Measurements for Memristive Switches|
|Published:||March 06, 2012|
|Abstract:||Accurate capture of the Set/Reset characteristics is a necessary but challenging task for the development of memristive switches. Here we describe and demonstrate a technique capable of meeting this challenge. This technique can measure the transient current during the Set/Reset operation with a rise time of 4 ns and simultaneously measure the OFF state resistance (Roff) to 1.6 GΩ and the ON state resistance (Ron) to less than 10 . It can also rapidly cycle through the sense states to study endurance. Solid electrolyte Pt/Ta2O5/Cu memristive switches (Ron/Roff ratio of >104) are used to highlight this new measurement capability.|
|Citation:||Electrochemical and Solid State Letters|
|Pages:||pp. H173 - H175|
|Research Areas:||Analysis Tools and Techniques, Characterization|
|DOI:||http://dx.doi.org/10.1149/2.002206esl (Note: May link to a non-U.S. Government webpage)|