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Publication Citation: GaN Nanowires Grown by Molecular Beam Epitaxy

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Author(s): Kristine A. Bertness; Norman A. Sanford; Albert Davydov;
Title: GaN Nanowires Grown by Molecular Beam Epitaxy
Published: August 01, 2011
Abstract: The unique properties of GaN nanowires grown by molecular beam epitaxy are reviewed. These properties include the absence of residual strain, exclusion of most extended defects, long photoluminescence lifetime, low surface recombination velocity,and high mechanical quality factor. The high purity of the nanowires grown by this method allows for controllable ntype doping. P-type doping presents more challenges but has been demonstrated in active light-emitting diode devices. The present understanding of nucleation and growth of these materials is also reviewed.
Citation: IEEE Journal of Selected Topics in Quantum Electronics
Volume: 17
Issue: 4
Pages: pp. 847 - 858
Keywords: Crystal growth; nanotechnology; photoluminescence; semiconductor materials
Research Areas: Molecular Physics, Nanomanufacturing, Nanofabrication, Nanomanufacturing, and Nanoprocessing, Nanotechnology
PDF version: PDF Document Click here to retrieve PDF version of paper (971KB)