Shrestha, P.
, Ochia, A.
, Cheung, K.
, Campbell, J.
, Baumgart, H.
and Harris, G.
(2011),
High Speed Switching Characteristics of Pt/Ta2O5/Cu Memristive Switch, ECS Transactions
(Accessed April 18, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
High Speed Switching Characteristics of Pt/Ta2O5/Cu Memristive Switch
Published
Author(s)
, , , , Helmut Baumgart, Gary Harris
Abstract
Accurate measurements of the transient details of switching a memristive switch are crucial to the elucidation of the switching mechanism. Such high-speed measurements are often plagued by artifacts. Here we describe a measurement technique capable of capturing the Set/Reset characteristics of memristive switches with high accuracy. This technique can accurately measure the transient current during the Set/Reset operation with rise times as short as 2 ns. The circuit is designed to cycle through (Set/Reset) and sense (read the state) rapidly in order to enable the study of endurance. The sense circuit is capable to measure currents as low as 30 pA yielding accurate measurements of the resistance in the off state up to 1.6 GΩ. Solid electrolyte Pt/Ta2O5/Cu memristive switches are examined that exhibit ON and OFF state resistance (Ron and Roff) ratios of >104 and endurance cycles of >6x104.Citation
ECS Transactions
Volume
41
Issue
3
Pub Type
Journals
Citation
Created October 8, 2011, Updated February 19, 2017