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NIST Authors in Bold
|Author(s):||Randolph E. Elmquist; Felipe Hernandez-Marquez; Mariano Real; Tian T. Shen; David B. Newell; Colin J. Jacob; George R. Jones;|
|Title:||Graphene: Plane and Simple Electrical Metrology?|
|Published:||December 07, 2011|
|Abstract:||The development of large-area graphene has direct application to electrical standards including the quantized Hall resistance because of unique characteristics not found in conventional devices. These include symmetrical conduction by electrons and holes, wide separation between Landau energy levels, and an exposed surface for contacting and gating. When the potential of this new material was recognized, NIST began developing a capability to produce graphene on SiC wafers and initiated collaborations with several other institutes interested in developing and understanding the behavior of quantized Hall resistance (QHR) standards. We explain some of the special characteristics of monolayer graphene and describe our efforts to develop graphene devices as resistance standards.|
|Proceedings:||NCSL International Annual Workshop and Symposium 2011|
|Dates:||August 21-25, 2011|
|Keywords:||graphene, quantum Hall effect, electrical resistance standards|
|Research Areas:||Electrical Quantities, Electron Physics|