Cheung, K.
and Campbell, J.
(2011),
High Mobility Channel from the Prospective of Random Telegraph Noise, 41st European Solid-State Device Research Conference (ESSDERC), Helsinki, -1, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=908755
(Accessed April 18, 2024)
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High Mobility Channel from the Prospective of Random Telegraph Noise
Published
Author(s)
,
Abstract
We experimentally verify for the first time that random telegraph noise (RTN) in ultra-scaled MOSFETs is related to the inversion charge density in the channel. We then examine the merit of high mobility channel devices from the RTN prospective. This analysis strongly suggests that RTN is a serious obstacle for high mobility channel adoption.Proceedings Title
41st European Solid-State Device Research Conference (ESSDERC)
Conference Dates
September 12-16, 2011
Conference Location
Helsinki
Pub Type
Conferences
Download Paper
Keywords
random telegraph noise, MOSFET, high mobility, scaling
Citation
Created September 12, 2011, Updated February 19, 2017