NIST Authors in Bold
| Author(s): | Alamgir Karim; Veena Misra; G. Srinivasan; Yaw S. Obeng; S De Gendt; |
|---|---|
| Title: | Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications 3 -and- Tutorials in Nanotechnology: Dielectrics in Nanosystems |
| Published: | April 21, 2011 |
| Abstract: | This issue of ECS Transactions will cover the following topics in (a) Graphene Material Properties, Preparation, Synthesis and Growth; (b) Metrology and Characterization of Graphene; (c) Graphene Devices and Integration; (d) Graphene Transport and mobility enhancement; (e) Thermal Behavior of Graphene and Graphene Based Devices; (f) Ge & III-V devices for CMOS mobility enhancement; (g) III.V Heterostructures on Si substrates; (h) Nano-wires devices and modeling; (i) Simulation of devices based on Ge, III-V, nano-wires and Graphene; (j) Nanotechnology applications in information technology, biotechnology and renewable energy (k) Beyond CMOS device structures and properties of semiconductor nano-devices such as nanowires; (l) Nanosystem fabrication and processing; (m) nanostructures in chemical and biological sensing system for healthcare and security; and (n) Characterization of nanosystems; (f) Nanosystem modeling. |
| Citation: | Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications 3 -and- Tutorials in Nanotechnology: Dielectrics in Nanosystems |
| Publisher: | Electrochemical Society, Pennington, NJ |
| Pages: | pp. 1 - 408 |
| Research Areas: | Nanomaterials |