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|Author(s):||Dazhen Gu; Thomas M. Wallis; Paul T. Blanchard; SangHyun S. Lim; Atif A. Imtiaz; Kristine A. Bertness; Norman A. Sanford; Pavel Kabos;|
|Title:||Deembedding parasitic elements of GaN nanowire MESFETs by use of microwave measurements|
|Published:||June 03, 2011|
|Abstract:||We present a deembedding roadmap for extracting parasitic elements of a nanowire (NW) MESFET device from full two-port scattering-parameter measurements in the frequency range from 0.1 GHz to 25 GHz. The NW MESFET is integrated in a microwave coplanar waveguide structure. A convetional MESFET circuit modeling is modified to include small capacitance that is nonnegligible in the NW devices. We follow a detailed step-by-step removal of external elements and an iteration search for optimized model data. The fitted model indicates good agreement with experimental data across the frequency band. This study reflects a significant step toward full circuit modeling of NW MESFET devices under the normal operating conditions.|
|Citation:||Applied Physics Letters|
|Pages:||pp. 223109-1 - 223109-3|
|Research Areas:||Measurement Solutions, Nanowires|