| Author(s): |
Dazhen Gu; Thomas M. Wallis; Paul T. Blanchard; SangHyun Lim; Atif Imtiaz; Kristine A. Bertness; Norman A. Sanford; Pavel Kabos; |
| Title: |
Deembedding parasitic elements of GaN nanowire MESFETs by use of microwave measurements |
| Published: |
June 03, 2011 |
| Abstract: |
We present a deembedding roadmap for extracting parasitic elements of a nanowire (NW) MESFET device from full two-port scattering-parameter measurements in the frequency range from 0.1 GHz to 25 GHz. The NW MESFET is integrated in a microwave coplanar waveguide structure. A convetional MESFET circuit modeling is modified to include small capacitance that is nonnegligible in the NW devices. We follow a detailed step-by-step removal of external elements and an iteration search for optimized model data. The fitted model indicates good agreement with experimental data across the frequency band. This study reflects a significant step toward full circuit modeling of NW MESFET devices under the normal operating conditions. |
| Citation: |
Applied Physics Letters |
| Pages: |
pp. 223109-1 - 223109-3 |
| Research Areas: |
Nanowires, Measurement Solutions |
