NIST logo

Publication Citation: TSOM Method for Semiconductor Metrology

NIST Authors in Bold

Author(s): Ravikiran Attota; Ronald G. Dixson; John A. Kramar; James E. Potzick; Andras Vladar; Benjamin D. Bunday; Erik Novak; Andrew C. Rudack;
Title: TSOM Method for Semiconductor Metrology
Published: April 18, 2011
Abstract: Through-focus scanning optical microscopy (TSOM) is a new metrology method that achieves 3D nanoscale measurement resolution using conventional optical microscopes; measurement sensitivities are comparable to what is typical using Scatterometry, SEM and AFM. TSOM can be used in both reflection and transmission modes and is applicable to a variety of target materials and shapes. Nanometrology applications that have been demonstrated experimentally or through simulations include defect analysis, inspection and process control; critical dimension, photomask, overlay, nanoparticle, thin film, and 3D interconnect metrologies; line-edge roughness measurements, and nanoscale movements of parts in MEMS/NEMS. Industries that could benefit include semiconductor, data storage, photonics, biotechnology, and, nanomanufacturing. TSOM is relatively simple and inexpensive, has high throughput, and provides nanoscale sensitivity for 3D measurements with potentially significant savings and yield improvements in manufacturing.
Conference: Metrology Inspection and Process Control
Proceedings: SPIE Advanced Lithography
Volume: 7971
Pages: pp. 79710T-1 - 79710T-15
Location: San Jose, CA
Dates: February 28-March 3, 2011
Keywords: TSOM; through focus; optical microscope; nanometrology; process control; nanomanufacturing; nanoparticles; overlay metrology; critical dimension; defect analysis; dimensional analysis; MEMS; NEMS; photonics;
Research Areas: Optical Metrology, Length, Instrumentation, Nanobiotechnology, Optical microscopy, Characterization, Nanometrology, and Nanoscale Measurements
PDF version: PDF Document Click here to retrieve PDF version of paper (3MB)