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|Author(s):||Brian J. Grummel; Habib A. Mustain; Z. J. Shen; Allen R. Hefner Jr.;|
|Title:||Reliability Study of Au-In Transient Liquid Phase Bonding for SiC Power Semiconductor Devices|
|Published:||May 24, 2011|
|Abstract:||Transient Liquid Phase (TLP) bonding is a promising technique for SiC and other wide-bandgap power semiconductor device die-attach and high temperature packaging. TLP bonding advances modern solder technology by raising the solder melting point to over 500 °C with a low 200 °C processing temperature that creates much greater mechanical reliability and rigidity while the thermal conductivity of the die-attach is increased by 67% and the thermal resistance reduced by an order of magnitude over the traditional Sn-Pb solders. It is also shown here that Au-In TLP bonds exude excellent electrical reliability with thermal cycling degradation if designed correctly as experimentally confirmed.|
|Conference:||2011 23nd International Symposium on Power Semiconductor Devices & IC's (ISPSD)|
|Proceedings:||Power Semiconductor Devices & IC's (ISPSD), 2011 23nd International Symposium on|
|Location:||San Diego, CA|
|Dates:||May 23-26, 2011|
|Keywords:||SiC, Silicon Carbide, Semiconductor, Power Semiconductors, WBG, Wide Bandgap, Power Electronics, Packaging, TLP, Transient Liquid Phase, Resistivity, EDX, SEM, Indium, Au-In, Reliability, Thermal Cycling|
|Research Areas:||Analysis Tools and Techniques, Characterization, Interconnect and Packaging Metrology, System Design and Test Metrology|
|PDF version:||Click here to retrieve PDF version of paper (324KB)|