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Publication Citation: Reliability Study of Au-In Transient Liquid Phase Bonding for SiC Power Semiconductor Devices

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Author(s): Brian J. Grummel; Habib A. Mustain; Z. J. Shen; Allen R. Hefner Jr;
Title: Reliability Study of Au-In Transient Liquid Phase Bonding for SiC Power Semiconductor Devices
Published: May 24, 2011
Abstract: Transient Liquid Phase (TLP) bonding is a promising technique for SiC and other wide-bandgap power semiconductor device die-attach and high temperature packaging. TLP bonding advances modern solder technology by raising the solder melting point to over 500 °C with a low 200 °C processing temperature that creates much greater mechanical reliability and rigidity while the thermal conductivity of the die-attach is increased by 67% and the thermal resistance reduced by an order of magnitude over the traditional Sn-Pb solders. It is also shown here that Au-In TLP bonds exude excellent electrical reliability with thermal cycling degradation if designed correctly as experimentally confirmed.
Conference: 2011 23nd International Symposium on Power Semiconductor Devices & IC's (ISPSD)
Proceedings: Power Semiconductor Devices & IC's (ISPSD), 2011 23nd International Symposium on
Pages: 4 pp.
Location: San Diego, CA
Dates: May 23-26, 2011
Keywords: SiC; Silicon Carbide; Semiconductor; Power Semiconductors; WBG; Wide Bandgap; Power Electronics; Packaging; TLP; Transient Liquid Phase; Resistivity; EDX; SEM; Indium; Au-In; Reliability; Thermal Cycling
Research Areas: Analysis Tools and Techniques, Characterization, Interconnect and Packaging Metrology, System Design and Test Metrology
PDF version: PDF Document Click here to retrieve PDF version of paper (324KB)