| Author(s): |
Jason T. Ryan; Liangchun Yu; Jae Han; Joseph J. Kopanski; Kin P. Cheung; Fei Zhang; Chen Wang; Jason P. Campbell; John S. Suehle; Viniyak Tilak; Jody Fronheiser; |
| Title: |
A New Interface Defect Spectroscopy Method |
| Published: |
April 11, 2011 |
| Abstract: |
A new interface defect spectroscopy method based on variable height charge pumping capable of observing the amphoteric nature of Si/SiO2 interface states in production quality sub-micron devices is demonstrated. It can help to resolve the long standing debate about the true nature of interface states. |
| Proceedings: |
International Symposium on VLSI Technology, Systems and Applications |
| Pages: |
5 pp. |
| Location: |
Hsinchu, -1 |
| Dates: |
April 25-27, 2011 |
| Keywords: |
interface states, Pb centers, charge pumping |
| Research Areas: |
Characterization |
