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Publication Citation: A New Interface Defect Spectroscopy Method

NIST Authors in Bold

Author(s): Jason T. Ryan; Liangchun (. Yu; Jae Han; Joseph J. Kopanski; Kin P. Cheung; Fei Zhang; Chen Wang; Jason P. Campbell; John S. Suehle; Viniyak Tilak; Jody Fronheiser;
Title: A New Interface Defect Spectroscopy Method
Published: April 11, 2011
Abstract: A new interface defect spectroscopy method based on variable height charge pumping capable of observing the amphoteric nature of Si/SiO2 interface states in production quality sub-micron devices is demonstrated. It can help to resolve the long standing debate about the true nature of interface states.
Proceedings: International Symposium on VLSI Technology, Systems and Applications
Pages: 5 pp.
Location: Hsinchu, -1
Dates: April 25-27, 2011
Keywords: interface states, Pb centers, charge pumping
Research Areas: Characterization