Take a sneak peek at the new NIST.gov and let us know what you think!
(Please note: some content may not be complete on the beta site.).

View the beta site
NIST logo

Publication Citation: Landau Levels and Band Bending in Few-Layer Epitaxial Graphene

NIST Authors in Bold

Author(s): Hongki Min; Shaffique Adam; Young J. Song; Joseph A. Stroscio; Mark D. Stiles; Allan H. MacDonald;
Title: Landau Levels and Band Bending in Few-Layer Epitaxial Graphene
Published: April 18, 2011
Abstract: The carrier density distributions in few-layer-graphene systems grown on the carbon face of silicon carbide can be radically altered by the presence of a Scanning Tunneling Microscope (STM) tip used to probe top-layer electronic properties, and by a perpendicular magnetic field which induces well-defined Landau levels. Hartree approximation calculations in the perpendicular field case show that charge tends to rearrange between the layers so that the filling factors of most layers are pinned at integer values. We use our analysis to provide insight into the role of buried layers in recent few-layer-graphene STM studies and discuss the limitations of our model.
Citation: Physical Review B
Volume: 83
Issue: 15
Research Areas: Nanophysics, Electron Physics
PDF version: PDF Document Click here to retrieve PDF version of paper (561KB)