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Publication Citation: Application of ALD High-k Dielectric Films as Charge Storage Layer and Blocking Oxide in Nonvolatile Memories

NIST Authors in Bold

Author(s): Xiaoxiao Zhu; H Gu; Qiliang Li; Helmut Baumgart; D. E. Ioannou; John S. Suehle; Curt A. Richter;
Title: Application of ALD High-k Dielectric Films as Charge Storage Layer and Blocking Oxide in Nonvolatile Memories
Published: October 06, 2009
Abstract:
Pages: 30 pp.
Research Areas: Nanoelectronics and Nanoscale Electronics